UNISONIC TECHNOLOGIES CO., LTD
10N90
Preliminary
Power MOSFET
10 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC10N90 is a N-channel mode Power FET using UTC’s
advanced technology to provide costumers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
10N90
is generally applied in high efficiency switch
mode power supply.
1
TO-220
1
TO-220F1
FEATURES
* Lower Leakage Current: 25µA (Max.) @ V
DS
= 900V
* Improved Gate Charge
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N90L-TA3-T
10N90G-TA3-T
10N90L-TF1-T
10N90G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F1
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-502.a
10N90
PARAMETER
Preliminary
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
RATINGS
UNIT
Drain-Source Voltage
900
V
Gate-Source Voltage
±30
V
Continuous
10
A
Drain Current
Pulsed (Note 1)
40
A
Avalanche Current (Note 1)
10
A
Single Pulsed (Note 2)
794
mJ
Avalanche Energy
Repetitive (Note 1)
28
mJ
Peak Diode Recovery dv/dt (Note 3)
1.5
V/ns
TO-220
156
W
Power Dissipation
P
D
TO-220F1
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
TO-220
TO-220F1
TO-220
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
0.8
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-502.a
10N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
900
Breakdown Voltage Temperature
△
BV
DSS
/
△
T
J
I
D
=250µ
1.11
Coefficient
Drain-Source Leakage Current
I
DSS
V
DS
=900V
Forward
V
GS
=+30V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=5V, I
D
=250µA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=5A (Note 4)
7.85
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
2760
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
245
105
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
127
V
GS
=10V, V
DS
=720V, I
D
=10A
Gate to Source Charge
Q
GS
19.2
(Note 4, 5)
56.8
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
29
Rise Time
t
R
54
V
DD
=450V, I
D
=10A, R
G
=9.6Ω
(Note 4, 5)
Turn-OFF Delay Time
t
D(OFF)
161
47
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Integral Reverse Pn-Diode In The
Maximum Body-Diode Pulsed Current
MOSFET
I
SM
(Note1)
Drain-Source Diode Forward Voltage
V
SD
I
S
=10A, V
GS
=0V, T
J
=25°C
(Note 4)
I
F
=10A, dI
F
/dt=100A/µs, T
J
=25°C
Body Diode Reverse Recovery Time
t
RR
690
(Note 4)
Body Diode Reverse Recovery Charge
Q
RR
11.94
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 15mH, I
AS
= 10A, V
DD
= 50V, R
G
= 27Ω, Starting T
J
= 25°C
3. I
SD
≤
10A, di/dt
≤
190A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
250µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
MAX UNIT
V
V/°C
25
100
-100
3.5
1.2
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
3580
290
125
165
70
20
330
105
10
40
1.4
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3 of 6
QW-R502-502.a
10N90
Gate Charge Test Circuit
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Waveforms
V
GS
Q
G
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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4 of 6
QW-R502-502.a
10N90
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
F
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-502.a
GD32 MCU
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