UNISONIC TECHNOLOGIES CO., LTD
10N80
800V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC
10N80
uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent R
DS(ON)
, low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
= 1.1Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 15 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1-T
Package
TO-3P
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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QW-R502-218.D
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10N80
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current (T
C
= 25°С)
I
D
10
A
Pulsed Drain Current (Note 2)
I
DM
40
A
Avalanche Current (Note 2)
I
AR
10
A
Single Pulsed (Note 3)
E
AS
920
mJ
Avalanche Energy
24
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-3P
240
Power Dissipation
W
TO-220F1
36
P
D
TO-3P
1.92
°С/W
Linear Derating Factor above T
C
= 25°С
TO-220F1
0.288
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=17.3mH, I
AS
=10A, V
DD
=50V, R
G
=25Ω, Satarting T
J
=25°C
4. I
SD
≤
10 A, di/dt
≤
200A/μs, V
DD
≤BV
DSS
, Satarting T
J
=25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-3P
TO-220F1
TO-3P
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
40
62.5
0.52
3.47
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
ΔBV
DSS
/ΔT
J
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
GS
=0 V, I
D
=250 µA
V
DS
=800V, V
GS
=0 V
V
DS
=640V, T
C
=125°C
V
DS
=0 V, V
GS
= ±30 V
I
D
=250 µA, Referenced to 25°C
V
DS
=V
GS
, I
D
=250 µA
V
GS
= 10 V, I
D
= 5.0 A
3.0
0.93
MIN
800
10
100
±100
0.98
5.0
1.1
TYP
MAX UNIT
V
µA
nA
mV/°С
V
Ω
pF
pF
pF
V
DS
=25V, V
GS
=0V, f=1MHz
2150 2800
180
230
15
20
50
130
90
80
45
13.5
17
110
270
190
170
58
V
DD
=400V, I
D
=10.0A,
R
G
=25Ω(Note 1,2)
V
DS
=640V, V
GS
=10V,
I
D
=10.0A (Note 1,2)
ns
nC
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QW-R502-218.D
10N80
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=10.0 A,V
GS
=0V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0 V, dI
F
/dt = 100 A/µs,
Reverse Recovery Time
t
RR
I
S
= 10.0 A (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
2. Independent of operating temperature.
Power MOSFET
MIN
TYP
MAX UNIT
1.4
10.0
A
40.0
730
10.9
ns
nC
V
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QW-R502-218.D
10N80
TEST CIRCUIT
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-218.D
10N80
TEST CIRCUIT(Cont.)
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
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QW-R502-218.D