UNISONIC TECHNOLOGIES CO., LTD
6N60
6.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
1
TO-251
1
TO-220
Power MOSFET
DESCRIPTION
The UTC
6N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
1
TO-220F
1
TO-220F1
FEATURES
* R
DS(ON)
= 1.5Ω @V
GS
= 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
1
TO-252
Lead-free:
6N60L
Halogen-free:6N60G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N60L-x-TA3-T
6N60G-x-TA3-T
6N60L-x-TF1-T
6N60G-x-TF1-T
6N60L-x-TF3-T
6N60G-x-TF3-T
6N60L-x-TM3-T
6N60G-x-TM3-T
6N60L-x-TN3-R
6N60G-x-TN3-R
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
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Tape Reel
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1 of 6
QW-R502-117.D
6N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
6N60-A
6N60-B
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
RATINGS
600
650
±30
UNIT
V
V
V
6.2
A
6.2
A
24.8
A
Single Pulsed (Note 3)
440
mJ
Avalanche Energy
13
mJ
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
4.5
ns
TO-220
125
W
Power Dissipation
P
D
TO-220F/TO-220F1
40
W
TO-251/TO-252
55
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 14mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6.2A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θ
JA
RATING
62.5
62.5
110
1.0
3.2
2.27
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Case
θ
JC
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
6N60-A
6N60-B
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
MIN TYP MAX UNIT
600
650
10
100
-100
0.53
2.0
4.0
1.5
770 1000
95 120
10
13
V
V
μA
nA
nA
V/°C
V
Ω
pF
pF
pF
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 600V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
I
GSS
V
GS
= -30V, V
DS
= 0V
I = 250
μA,
△
BV
DSS
/△T
J D
Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.1A
V
DS
=25V, V
GS
=0V, f=1.0 MHz
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QW-R502-117.D
6N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=6.2A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, I
D
=6.2A, V
GS
=10 V
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0 V, I
S
= 6.2 A,
Reverse Recovery Time
t
RR
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
20
70
40
45
20
4.9
9.4
50
150
90
100
25
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
1.4
6.2
24.8
290
2.35
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3 of 6
QW-R502-117.D
6N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-117.D
6N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-117.D
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