UNISONIC TECHNOLOGIES CO., LTD
6N80
Preliminary
Power MOSFET
6.0 Amps, 800 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
6N80
is a N-channel mode Power FET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
6N80
is universally applied in high efficiency switch
mode power supply.
1
TO-220
1
TO-220F
1
TO-220F1
FEATURES
* 6.0A, 800V, R
DS(on)
= 2.5Ω @V
GS
= 10 V
* Improved dv/dt capability
* Fast switching
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N80L-TA3-T
6N80G-TA3-T
6N80L-TF3-T
6N80G-TF3-T
6N80L-TF1-T
6N80G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F
TO-220F1
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-500.a
6N80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
6*
A
Drain Current
22 *
A
Pulsed (Note 1)
I
DM
Single Pulsed (Note 2)
E
AS
680
mJ
Avalanche Energy
15.8
mJ
Repetitive (Note 1)
E
AR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
138
W
Power Dissipation
P
D
TO-220F/TO-220F1
51
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Drain current limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER
TO-220
Junction to Ambient
TO-220F/TO-220F1
TO-220
Junction to Case
TO-220F/TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
0.9
2.45
UNIT
°C/W
°C/W
°C/W
°C/W
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2 of 6
QW-R502-500.a
6N80
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
MIN TYP MAX UNIT
800
0.97
10
100
100
-100
3.0
1.6
5.4
5.0
2.5
V
V/°C
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
I
DSS
I
GSS
V
DS
=800V, V
GS
=0V
V
DS
=640V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=3A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=640V, I
D
=6A
Gate to Source Charge
Q
GS
(Note 4, 5)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=6A, R
G
=25Ω
(Note 4, 5)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=6A, V
GS
=0V
Reverse Recovery Time
t
RR
I
S
=6A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 4)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 37mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
5.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
1010 1310
90
115
8
11
21
6
9
26
65
47
44
30
60
140
105
90
6
22
1.4
615
5.4
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3 of 6
QW-R502-500.a
6N80
Gate Charge Test Circuit
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Waveforms
V
GS
Q
G
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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4 of 6
QW-R502-500.a
6N80
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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5 of 6
QW-R502-500.a
测试/测量
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