UNISONIC TECHNOLOGIES CO., LTD
6N40
Preliminary
Power MOSFET
6 Amps, 400 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
6N40
is an N-Channel enhancement mode Power
FET using UTC’s perfect planar stripe, DMOS technology to
provide customers with superior switching performance and
minimum on-state resistance. It also can withstand high energy
pulse in the avalanche and commutation mode.
The UTC
6N40
is generally used in applications , such as
electronic lamp ballasts based on half bridge topology and high
efficiency switched mode power supplies.
FEATURES
* 6A, 400V, R
DS(ON)
=1.0Ω @ V
GS
=10V
* Fast switching speed
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
6N40L-TF3-T
6N40G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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1 of 6
QW-R502-487.a
6N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 1)
I
AR
6
A
Continuous
I
D
6 (Note 6)
A
Drain Current
24(Note 6)
A
Pulsed (Note 1)
I
DM
Single Pulsed (Note 2)
E
AS
270
mJ
Avalanche Energy
Repetitive (Note 1)
E
AR
7.3
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation
P
D
38
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.31
UNIT
°C/W
°C/W
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QW-R502-487.a
6N40
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
400
0.54
1
10
+100
-100
2.0
0.83
4.7
480
80
15
16
2.3
8.2
13
65
21
38
4.0
1
TYP
MAX UNIT
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
V
GS
=0V, I
D
=250µA
I
D
=250μA,
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
Referenced to 25°C
V
DS
=400V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=320V, T
J
=125°C
Forward
V
DS
=0V ,V
GS
=+30V
Gate-Source Leakage Current
I
GSS
Reverse
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
Forward Transconductance
g
FS
V
DS
=40V, I
D
=3A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=320V, V
GS
=10V, I
D
=6A
Gate-Source Charge
Q
GS
(Note 4,5)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=200V, I
D
=6A, R
G
=25Ω
(Note 4,5)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=6A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=6A,
dI
F
/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=13.7mH, I
AS
=6A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤6A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
4. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
6. Drain current limited by maximum junction temperature
625
105
20
20
35
140
55
85
6
24
1.4
230
1.7
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QW-R502-487.a
6N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-487.a
6N40
Gate Charge Test Circuit
Preliminary
Power MOSFET
Gate Charge Waveforms
V
GS
Q
G
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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QW-R502-487.a
嵌入式系统
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