UNISONIC TECHNOLOGIES CO., LTD
4N90
Preliminary
Power MOSFET
4 Amps, 900 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC
4N90
is a N-channel enhancement MOSFET adopting
UTC’s advanced technology to provide customers with DMOS,
planar stripe technology. This technology is designed to meet the
requirements of the minimum on-state resistance and perfect
switching performance. It also can withstand high energy pulse in
the avalanche and communication mode.
The UTC
4N90
is particularly applied in high efficiency switch
mode power supplies.
FEATURES
* Typically 17nC low gate charge
* High switching speed
* 4A, 900V, R
DS(ON)
=4.2Ω @ V
GS
=10V
* Typically 5.6pF low C
RSS
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N90L-TA3-T
4N90G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-479.a
4N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
900
V
Gate to Source Voltage
V
GSS
±30
V
Avalanche Current (Note 1)
I
AR
4
A
Continuous
I
D
4
A
Continuous Drain Current
16
A
Pulsed (Note 1)
I
DM
Single Pulsed (Note 2)
E
AS
570
mJ
Avalanche Energy
Repetitive (Note 1)
E
AR
14
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation
P
D
140
W
Operating Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.89
UNIT
°C/W
°C/W
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QW-R502-479.a
4N90
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
1.05
10
100
+100
-100
5.0
4.2
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
V
GS
=0V, I
D
=250µA
900
I
D
=250μA,
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
Referenced to 25°C
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=720V, T
C
=125°C
Forward
I
GSS
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
V
GS
=-30V, V
DS
=0V
Reverse
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=2A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=720V, V
GS
=10V, I
D
=4A
Gate-Source Charge
Q
GS
(Note 4,5)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=450V, I
D
=4A, R
G
=25Ω
(Note 4,5)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=4A,
dI
F
/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=67mH, I
AS
=4A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
5. Essentially independent of operating temperature
3.5
5
740
65
5.6
17
4.5
7.5
25
50
40
35
960
85
7.3
22
60
110
90
80
4
16
1.4
450
3.5
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3 of 6
QW-R502-479.a
4N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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4 of 6
QW-R502-479.a
4N90
Gate Charge Test Circuit
Preliminary
Power MOSFET
Gate Charge Waveforms
V
GS
Q
G
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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5 of 6
QW-R502-479.a
嵌入式系统
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