UNISONIC TECHNOLOGIES CO., LTD
4N60
4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
1
Power MOSFET
TO-220
DESCRIPTION
The UTC
4N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
1
TO-220F
TO-220F1
FEATURES
* R
DS(ON)
= 2.5Ω
@V
GS
= 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( C
RSS
= typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
1
1
TO-251
TO-252
SYMBOL
2.Drain
1
1
TO-263
TO-262
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60L-x-TA3-T
4N60G-x-TA3-T
4N60L-x-TF1-T
4N60G-x-TF1-T
4N60L-x-TF3-T
4N60G-x-TF3-T
4N60L-x-TM3-T
4N60G-x-TM3-T
4N60L-x-TN3-R
4N60G-x-TN3-R
4N60L-x-T2Q-T
4N60G-x-T2Q-T
4N60L-x-TQ3-R
4N60G-x-TQ3-R
4N60L-x-TQ3-T
4N60G-x-TQ3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1 of 8
QW-R502-061, N
4N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
PARAMETER
4N60-A
Drain-Source Voltage
4N60-B
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous
Drain Current
Pulsed (Note 2)
SYMBOL
Power MOSFET
RATINGS
UNIT
600
V
V
DSS
650
V
V
GSS
±30
V
I
AR
4.4
A
I
D
4.0
A
16
A
I
DM
4N60
260
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
4N60-E
200
mJ
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
W
TO-220F/TO-220F1
36
W
Power Dissipation
P
D
TO-251
50
W
TO-252
50
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-251
TO-252
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-251
TO-252
SYMBOL
4N60-A
4N60-B
Forward
Reverse
BV
DSS
I
DSS
I
GSS
SYMBOL
θ
JA
RATINGS
62.5
62.5
83
83
1.18
3.47
2.5
2.5
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
MIN TYP MAX UNIT
600
650
10
100
-100
0.6
2.0
4.0
2.5
520
70
8
670
90
11
V
V
μA
nA
nA
V/°С
V
Ω
pF
pF
pF
Junction to Case
θ
Jc
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 600 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
△
BV
DSS
/△T
J
I
D
= 250
μA,
Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 2.2 A
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
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2 of 8
QW-R502-061,N
4N60
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
13 35
V
DD
= 300V, I
D
= 4.0A, R
G
= 25Ω
Turn-On Rise Time
t
R
45 100
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
25 60
Turn-Off Fall Time
t
F
35 80
Total Gate Charge
Q
G
15 20
V
DS
= 480V,I
D
= 4.0A, V
GS
= 10 V
Gate-Source Charge
Q
GS
3.4
(Note 1, 2)
Gate-Drain Charge
Q
GD
7.1
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4 A
1.4
Maximum Continuous Drain-Source Diode
I
S
4.4
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
17.6
Forward Current
V
GS
= 0 V, I
S
= 4.4 A,
Reverse Recovery Time
t
RR
250
dI
F
/dt = 100 A/μs (Note 1)
1.5
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNIT
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
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3 of 8
QW-R502-061,N
4N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 8
QW-R502-061,N
4N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
5 of 8
QW-R502-061,N
UNISONIC TECHNOLOGIES CO., LTD
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