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MAAM71200-H1

产品描述7500 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
产品类别无线/射频/通信    射频和微波   
文件大小129KB,共4页
制造商MACOM
官网地址http://www.macom.com
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MAAM71200-H1概述

7500 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

7500 MHz - 12000 MHz 射频/微波宽带低功率放大器

MAAM71200-H1规格参数

参数名称属性值
厂商名称MACOM
包装说明LCC6,.4X.32,115
Reach Compliance Codecompli
其他特性HIGH RELIABILITY
特性阻抗50 Ω
构造COMPONENT
增益14.5 dB
最大输入功率 (CW)20 dBm
安装特点SURFACE MOUNT
端子数量6
最大工作频率12000 MHz
最小工作频率7500 MHz
最高工作温度100 °C
最低工作温度-50 °C
封装主体材料CERAMIC
封装等效代码LCC6,.4X.32,115
电源4 V
射频/微波设备类型WIDE BAND LOW POWER
最大压摆率55 mA
表面贴装YES
技术GAAS
最大电压驻波比1.8

文档预览

下载PDF文档
MAAM71200-H1
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Features
Noise Figure: 2.7 dB Typical
Gain: 15.5 dB Typical
Single Bias Supply
Low Current Consumption
DC Decoupled RF Input and Output
Ceramic Package
Rev. V7
Functional Diagram
Description
The MAAM71200-H1 is a wide band, low noise
GaAs MMIC amplifier enclosed in a leadless
ceramic package.
The MAAM71200-H1 is a
packaged version of The MAAM71200 low noise
MMIC amplifier chip. The fully monolithic design
operates in 50
without the need for external
components.
The MAAM71200-H1 is ideally suited for microstrip
assemblies where wire or ribbon bonds are used for
interconnects. Typical applications include radar,
EW and communication systems.
The MAAM71200-H1 is fabricated using a mature
0.5-micron gate length GaAs process for increased
reliability and performance repeatability.
1. Case must be electrically connected to RF and DC ground.
2. The RF bond inductance from the transmission line to the
package is assumed to be 0.25 nH. Variations in bond
inductance will result in variations in VSWR and gain slope.
A small capacitive stub may be needed depending on the
inductance realized in the final assembly.
3. Nominal bias is obtained by setting V
DD
= 4 V.
4. Increasing V
DD
from 4 volts to 6 volts increases output power
and high frequency bandwidth.
Absolute Maximum Ratings
5,6
Parameter
Absolute Maximum
+20 dBm
+7 V
+150°C
+175°C/W
-65°C to +150°C
Ordering Information
Part Number
MAAM71200-H1
Package
Bulk Packaging
Input Power
V
DD
Junction Temperature
Thermal Resistance
Storage Temperature
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/A-COM Technology does not recommend sustained
operation near these survivability limits.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
India
Tel: +91.80.43537383
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

MAAM71200-H1相似产品对比

MAAM71200-H1 MAAM71200-H1_V7
描述 7500 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 7500 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
最大工作频率 12000 MHz 12000 MHz
最小工作频率 7500 MHz 7500 MHz
最大电压驻波比 1.8 1.8
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