Insulated Gate Bipolar Transistor, 45A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 零件包装代码 | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 45 A |
| 集电极-发射极最大电压 | 330 V |
| 配置 | SINGLE |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 225 |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | POWER CONTROL |
| 晶体管元件材料 | SILICON |
| 标称断开时间 (toff) | 298 ns |
| 标称接通时间 (ton) | 41 ns |
| IRG7S319UTRR | IRG7S319UTRLPBF | IRG7S319UTRL | IRG7S319UTRRPBF | IRG7S319U | |
|---|---|---|---|---|---|
| 描述 | Insulated Gate Bipolar Transistor, 45A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 | Insulated Gate Bipolar Transistor, 45A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Insulated Gate Bipolar Transistor, 45A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 | Insulated Gate Bipolar Transistor, 45A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Insulated Gate Bipolar Transistor, 45A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 |
| 是否无铅 | 含铅 | 不含铅 | 含铅 | 不含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 符合 | 不符合 | 符合 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 零件包装代码 | D2PAK | D2PAK | D2PAK | D2PAK | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compli |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 45 A | 45 A | 45 A | 45 A | 45 A |
| 集电极-发射极最大电压 | 330 V | 330 V | 330 V | 330 V | 330 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| JEDEC-95代码 | TO-263AB | TO-263AB | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e3 | e0 | e3 | e0 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 225 | 260 | 225 | 260 | 225 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子面层 | TIN LEAD | MATTE TIN OVER NICKEL | TIN LEAD | MATTE TIN OVER NICKEL | TIN LEAD |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 |
| 晶体管应用 | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称断开时间 (toff) | 298 ns | 298 ns | 298 ns | 298 ns | 298 ns |
| 标称接通时间 (ton) | 41 ns | 41 ns | 41 ns | 41 ns | 41 ns |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
