d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. T
C
= 25 °C
S19-0093-Rev. A, 04-Feb-2019
Document Number: 79726
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS126DN
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 40 V, R
L
= 4
,
I
D
10 A,
V
GEN
= 7.5 V, R
g
= 1
V
DD
= 40 V, R
L
= 4
,
I
D
10 A,
V
GEN
= 10 V, R
g
= 1
V
DS
= 40 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 40 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 40 V, V
GS
= 7.5 V, I
D
=10 A
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 10 mA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 7.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 10 A
MIN.
80
-
-
2
-
-
-
40
-
-
-
-
-
-
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
63
-6.6
-
-
-
-
-
0.0085
0.0097
39
1402
176
11.2
21.1
16
6.5
3.4
23.5
0.76
13
6
16
6
14
6
15
6
-
-
0.78
36
43
24
12
MAX.
-
-
-
3.5
100
1
15
-
0.0102
0.0125
-
-
-
-
32
24
-
-
-
1.4
26
12
32
12
28
12
30
12
47.2
10
1.1
72
86
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0093-Rev. A, 04-Feb-2019
Document Number: 79726
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS126DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 6 V
Vishay Siliconix
Axis Title
10000
100
10000
80
2nd line
I
D
- Drain Current (A)
80
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
20
V
GS
= 4 V
60
V
GS
= 5 V
60
40
100
20
40
T
C
= 25 °C
T
C
= 125 °C
T
C
= -55 °C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
10
Output Characteristics
Transfer Characteristics
Axis Title
0.0120
10000
10 000
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.0110
V
GS
= 4.5 V
C
iss
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
1000
1000
1st line
2nd line
100
10
0
16
32
48
64
80
V
DS
- Drain-to-Source Voltage (V)
10000
1000
1st line
2nd line
V
GS
= 7.5 V, 10 A
0.0100
C
oss
0.0090
100
0.0080
V
GS
= 10 V
100
C
rss
0.0070
0
16
32
48
64
80
I
D
- Drain Current (A)
10
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
2.5
8
1000
1st line
2nd line
6
V
DS
= 20 V, 40 V, 60 V
2.0
V
GS
= 10 V, 10 A
1.5
4
100
2
1.0
100
0.5
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
10
0
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
10
Gate Charge
On-Resistance vs. Junction Temperature
S19-0093-Rev. A, 04-Feb-2019
Document Number: 79726
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS126DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.5
Axis Title
10000
Vishay Siliconix
0.2
2nd line
I
S
- Source Current (A)
2nd line
V
GS(th)
- Variance (V)
10
1000
1
T
J
= 150 °C
T
J
= 25 °C
1000
I
D
= 5 mA
1st line
2nd line
-0.4
100
I
D
= 250 μA
100
0.1
-0.7
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
10
-1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
10
Source-Drain Diode Forward Voltage
Axis Title
0.05
I
D
= 10 A
Threshold Voltage
Axis Title
10000
500
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.04
2nd line
P - Power (W)
1000
1st line
2nd line
0.03
T
J
= 125 °C
400
1000
1st line
2nd line
100
100
T
J
= 25 °C
300
0.02
200
100
0.01
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
10
0
0.0001
10
0.001
0.01
0.1
1
10
t - Time (s)
On-Resistance vs. Gate-to-Source Voltage
Axis Title
1000
I
DM
limited
Single Pulse Power, Junction-to-Ambient
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
1000
100 μs
1
Limited by R
DS(on)
a
1 ms
10 ms
100
100 ms
1s
BVDSS limited
10 s
DC
0.1
T
A
= 25 °C,
single pulse
0.01
0.01
10
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
S19-0093-Rev. A, 04-Feb-2019
Document Number: 79726
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
10
1st line
2nd line
-0.1
SiS126DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
50
10000
Vishay Siliconix
40
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
10
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
30
20
0
Current Derating
a
Axis Title
65
10000
2.0
Axis Title
10000
52
2nd line
P - Power (W)
2nd line
P - Power (W)
1000
1st line
2nd line
39
1.6
1000
1st line
2nd line
100
0.4
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
1.2
26
100
13
0.8
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S19-0093-Rev. A, 04-Feb-2019
Document Number: 79726
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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