MRF7S21170HR3_11,MRF7S21170HR3_11 pdf中文资料,MRF7S21170HR3_11引脚图,MRF7S21170HR3

Freescale Semiconductor

Technical Data

Document Number: MRF7S21170H

Rev. 6, 3/2011

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to

2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L

applications.

•

Typical Single--Carrier W--CDMA Performance: V

DD

= 28 Volts, I

DQ

=

1400 mA, P

out

= 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

Power Gain — 16 dB

Drain Efficiency — 31%

Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth

•

Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW

Output Power

•

P

out

@ 1 dB Compression Point

≃

170 Watts CW

Features

•

100% PAR Tested for Guaranteed Output Power Capability

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Integrated ESD Protection

•

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•

Optimized for Doherty Applications

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

MRF7S21170HR3

MRF7S21170HSR3

2110-

-2170 MHz, 50 W AVG., 28 V

SINGLE W-

-CDMA

LATERAL N-

-CHANNEL

RF POWER MOSFETs

CASE 465B-

-03, STYLE 1

NI-

-880

MRF7S21170HR3

CASE 465C-

-02, STYLE 1

NI-

-880S

MRF7S21170HSR3

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

V

DSS

V

GS

V

DD

T

stg

T

C

T

J

Value

--0.5, +65

--6.0, +10

32, +0

-- 65 to +150

150

225

Unit

Vdc

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 170 W CW

Case Temperature 73°C, 25 W CW

Symbol

R

θJC

Value

(2,3)

0.31

0.36

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

©

MRF7S21170HR3 MRF7S21170HSR3

1

RF Device Data

Freescale Semiconductor

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Class

1A (Minimum)

B (Minimum)

IV (Minimum)

Table 4. Electrical Characteristics

(T

A

= 25°C unless otherwise noted)

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(V

DS

= 65 Vdc, V

GS

= 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(V

DS

= 28 Vdc, V

GS

= 0 Vdc)

Gate--Source Leakage Current

(V

GS

= 5 Vdc, V

DS

= 0 Vdc)

On Characteristics

Gate Threshold Voltage

(V

DS

= 10 Vdc, I

D

= 372

μAdc)

Gate Quiescent Voltage

(V

DS

= 28 Vdc, I

D

= 1400 mAdc)

Fixture Gate Quiescent Voltage

(1)

(V

DD

= 28 Vdc, I

D

= 1400 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(V

GS

= 10 Vdc, I

D

= 3.72 Adc)

Dynamic Characteristics

(2)

Reverse Transfer Capacitance

(V

DS

= 28 Vdc

±

30 mV(rms)ac @ 1 MHz, V

GS

= 0 Vdc)

Output Capacitance

(V

DS

= 28 Vdc

±

30 mV(rms)ac @ 1 MHz, V

GS

= 0 Vdc)

C

rss

C

oss

—

0.9

703

—

pF

V

GS(th)

V

GS(Q)

V

GG(Q)

V

DS(on)

1.2

—

4.5

0.1

2

2.7

5.4

0.15

2.7

—

6.5

0.3

Vdc

I

DSS

I

DSS

I

GSS

—

10

1

500

μAdc

nAdc

Symbol

Min

Typ

Max

Unit

Functional Tests

(In Freescale Test Fixture, 50 ohm system) V

DD

= 28 Vdc, I

DQ

= 1400 mA, P

out

= 50 W Avg., f = 2167.5 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @

±5

MHz Offset.

Power Gain

Drain Efficiency

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

Adjacent Channel Power Ratio

Input Return Loss

G

ps

η

D

PAR

ACPR

IRL

15

29

5.7

—

16

31

6.1

--37

--15

18

—

--35

--9

dB

%

dB

dBc

dB

1. V

GG

= 2 x V

GS(Q)

. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part internally matched both on input and output.

(continued)

MRF7S21170HR3 MRF7S21170HSR3

2

RF Device Data

Freescale Semiconductor

Table 4. Electrical Characteristics

(T

A

= 25°C unless otherwise noted)

(continued)

Characteristic

Video Bandwidth @ 170 W PEP P

out

where IM3 = --30 dBc

(Tone Spacing from 100 kHz to VBW)

∆IMD3

= IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both

sidebands)

Gain Flatness in 60 MHz Bandwidth @ P

out

= 50 W Avg.

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ P

out

= 170 W CW

Average Group Delay @ P

out

= 170 W CW, f = 2140 MHz

Part--to--Part Insertion Phase Variation @ P

out

= 170 W CW

f = 2140 MHz, Six Sigma Window

Gain Variation over Temperature

(--30°C to +85°C)

Output Power Variation over Temperature

(--30°C to +85°C)

Symbol

VBW

—

25

—

Min

Typ

Max

Unit

MHz

Typical Performances

(In Freescale Test Fixture, 50 ohm system) V

DD

= 28 Vdc, I

DQ

= 1400 mA, 2110--2170 MHz Bandwidth

G

F

Φ

Delay

∆Φ

∆G

∆P1dB

—

0.4

1.95

1.7

18

0.015

0.01

—

dB

°

ns

°

dB/°C

MRF7S21170HR3 MRF7S21170HSR3

RF Device Data

Freescale Semiconductor

3

V

BIAS

R1

R2

Z17

V

SUPPLY

+

C1

C2

Z7

C8

C10

C12

C13

R3

RF

INPUT Z1

C3

C5

C6

C4

Z2

Z3

Z4

Z5

Z6

Z8

DUT

Z9

Z10

Z11

Z12

Z13

Z14

Z15

RF

OUTPUT

Z16

C17

C18

C14

Z18

C15

C16

C7

C9

C11

Z1

Z2*

Z3*

Z4*

Z5*

Z6

Z7

Z8

Z9

Z10

0.250″ x 0.083″ Microstrip

0.090″ x 0.083″ Microstrip

0.842″ x 0.083″ Microstrip

0.379″ x 0.083″ Microstrip

0.307″ x 0.083″ Microstrip

0.156″ x 0.787″ Microstrip

1.160″ x 0.080″ Microstrip

0.119″ x 0.787″ Microstrip

0.077″ x 0.880″ Microstrip

0.459″ x 1.000″ Microstrip

Z11

Z12*

Z13*

Z14*

Z15*

Z16

Z17, Z18

PCB

0.060″ x 0.760″ Microstrip

0.129″ x 0.083″ Microstrip

0.436″ x 0.083″ Microstrip

0.490″ x 0.083″ Microstrip

0.275″ x 0.083″ Microstrip

0.230″ x 0.083″ Microstrip

0.900″ x 0.080″ Microstrip

Taconic TLX8--0300, 0.030″,

ε

r

=2.55

* Variable for tuning

Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic

Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values

Part

C1

C2, C3, C7, C8, C17, C18

C4, C15

C5

C6

C9, C10, C11, C12

C13

C14

C16

R1, R2

R3

Description

100 pF Chip Capacitor

6.8 pF Chip Capacitors

0.3 pF Chip Capacitors

0.8 pF Chip Capacitor

0.2 pF Chip Capacitor

10

μF

Chip Capacitors

470

μF,

63 V Electrolytic Capacitor, Radial

0.4 pF Chip Capacitor

0.1 pF Chip Capacitor

10 kΩ, 1/4 W Chip Resistors

10

Ω,

1/4 W Chip Resistor

Part Number

ATC100B101JT500XT

ATC100B6R8BT500XT

ATC100B0R3BT500XT

ATC100B0R8BT500XT

ATC100B0R2BT500XT

C5750X5R1H106MT

477KXM063M

ATC100B0R4BT500XT

ATC100B0R1BT500XT

CRCW12061002FKEA

CRCW120610R0FKEA

Manufacturer

ATC

TDK

Illinois Capacitor

ATC

Vishay

MRF7S21170HR3 MRF7S21170HSR3

4

RF Device Data

Freescale Semiconductor

R2

R1

C1

C2

C8

C13

C10 C12

R3

C17

C4

CUT OUT AREA

C3

C5

C6

C14

C15

C16

C18

C9

C11

C7

MRF7S21170H

Rev 0

Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout

MRF7S21170HR3 MRF7S21170HSR3

RF Device Data

Freescale Semiconductor

5

MRF7S21170HR3_11

MRF7S21170HR3_11概述

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