MIC4102
100V Half Bridge MOSFET Driver
with Anti-Shoot Through Protection
PRELIMINARY SPECIFICATIONS
General Description
The MIC4102 is a high frequency, 100V Half Bridge
MOSFET driver IC featuring internal anti-shoot-through
protection. The low-side and high-side gate drivers are
controlled by a single input signal to the PWM pin. The
MIC4102 implements adaptive anti-shoot-through circuitry
to optimize the switching transitions for maximum
efficiency. The single input control also reduces system
complexity and greatly simplifies the overall design.
The MIC4102 also features a low-side drive disable pin.
This gives the MIC4102 the capability to operate in a non-
synchronous buck mode. This feature allows the MIC4102
to start up into applications where a bias voltage may
already be present without pulling the output voltage down.
Under-voltage protection on both the low-side and high-
side supplies forces the outputs low. An on-chip boot-strap
diode eliminates the discrete diode required with other
driver ICs.
The MIC4102 is available in the SOIC-8L package with a
junction operating range from –40°C to +125°C.
Data sheets and support documentation can be found on
Micrel’s web site at www.micrel.com.
Features
•
Drives high- and low-side N-Channel MOSFETs with
single input
•
Adaptive anti-shoot-through protection
•
Low side drive disable pin
•
Bootstrap supply voltage to 118V DC
•
Supply voltage up to 16V
•
TTL input thresholds
•
On-chip bootstrap diode
•
Fast 30ns propagation times
•
Drives 1000pF load with 10ns rise and 6ns fall times
•
Low power consumption
•
Supply under-voltage protection
•
2.5Ω pull up , 1.5Ω pull down output resistance
•
Space saving SOIC-8L package
•
–40°C to +125°C junction temperature range
Applications
•
•
•
•
•
•
High voltage buck converters
Networking / Telecom power supplies
Automotive power supplies
Current Fed Push-Pull Topologies
Ultrasonic drivers
Avionic power supplies
___________________________________________________________________________________________________________
Typical Application
100V Buck Regulator Solution
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
November 2006
M9999-112806
Micrel, Inc.
MIC4102
Ordering Information
Part Number
Standard
MIC4102BM
Pb-Free
MIC4102YM
Input
TTL
Junction Temp. Range
–40° to +125°C
Package
SOIC-8L
Pin Configuration
VDD 1
HB 2
HO 3
HS 4
8 LO
7 VSS
6 LS
5 PWM
SOIC-8L (M)
Pin Description
Pin Number
1
2
3
4
5
Pin Name
VDD
HB
HO
HS
PWM
Pin Function
Positive Supply to lower gate drivers. Decouple this pin to VSS (Pin 7). Bootstrap
diode connected to HB (pin 2).
High-Side Bootstrap supply. External bootstrap capacitor is required. Connect
positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip.
High-Side Output. Connect to gate of High-Side power MOSFET.
High-Side Source connection. Connect to source of High-Side power MOSFET.
Connect negative side of bootstrap capacitor to this pin.
Control Input. PWM high signal makes high-side HO output high, and low-side
LO output low. PWM low signal makes high-side HO output low, and low-side
LO output high.
Low-Side Disable. When pulled low, this control signal immediately terminates
the low-side LO output drive. The low-side LO output drive will remain low until
this signal is removed. HS drive is not affected by the LS signal. Here is the
logic table:
LS
0
0
1
1
PWM
0
1
0
1
LO
0
0
1
0
HO
0
1
0
1
6
LS
7
8
VSS
LO
Chip negative supply, generally will be grounded.
Low-Side Output. Connect to gate of Low-Side power MOSFET.
November 2006
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M9999-112806
Micrel, Inc.
MIC4102
Absolute Maximum Ratings
(1)
Supply Voltage (V
DD
, V
HB
– V
HS
) ...................... -0.3V to 18V
Input Voltages (V
PWM,
V
LS
) ..................... -0.3V to V
DD
+ 0.3V
Voltage on LO (V
LO
) .............................. -0.3V to V
DD
+ 0.3V
Voltage on HO (V
HO
) ......................V
HS
- 0.3V to V
HB
+ 0.3V
Voltage on HS (continuous) .............................. -1V to 110V
Voltage on HB ..............................................................118V
Average Current in VDD to HB Diode.......................100mA
Junction Temperature (T
J
) ........................–55°C to +150°C
Storage Temperature (T
s
) ..........................-60°C to +150°C
EDS Rating
(3)
..............................................................Note 3
Operating Ratings
(2)
Supply Voltage (V
DD
)........................................ +9V to +16V
Voltage on HS ................................................... -1V to 100V
Voltage on HS (repetitive transient) .................. -5V to 105V
HS Slew Rate............................................................ 50V/ns
Voltage on HB ...................................V
HS
+ 8V to V
HS
+ 16V
and............................................ V
DD
- 1V to V
DD
+ 100V
Junction Temperature (T
J
) ........................ –40°C to +125°C
Junction Thermal Resistance
SOIC-8L (θ
JA
)...................................................140°C/W
Electrical Characteristics
(4)
V
DD
= V
HB
= 12V; V
SS
= V
HS
= 0V; No load on LO or HO; T
A
= 25°C; unless noted.
Bold
values indicate –40°C< T
J
< +125°C.
Symbol
Supply Current
I
DD
I
DDO
I
HB
I
HBO
I
HBS
Parameter
Condition
Min
Typ
Max
Units
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to VSS Current, Quiescent
PWM = 0V
f = 500kHz
PWM = 0V
f = 500kHz
V
HS
= V
HB
= 110V
150
3
25
1.5
0.05
450
600
3.5
4.0
150
200
2.5
3
1
30
µA
mA
µA
mA
µA
Input Pins (TTL)
V
IL
V
IH
R
I
Low Level Input Voltage
Threshold
High Level Input Voltage
Threshold
Input Pull-down Resistance
0.8
1.5
1.5
V
2.2
500
V
kΩ
100
200
Under Voltage Protection
V
DDR
V
DDH
V
HBR
V
HBH
V
DD
Rising Threshold
V
DD
Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
6.5
7.3
0.5
8.0
V
V
6.0
7.0
0.4
8.0
V
V
Boost Strap Diode
V
DL
V
DH
R
D
Low-Current Forward Voltage
Low-Current Forward Voltage
Dynamic Resistance
I
VDD-HB
= 100µA
I
VDD-HB
= 100mA
I
VDD-HB
= 100mA
0.4
0.7
1.0
0.55
0.70
0.8
1.0
1.5
2.0
V
V
Ω
November 2006
3
M9999-112806
Micrel, Inc.
MIC4102
Electrical Characteristics
Symbol
LO Gate Driver
V
OLL
V
OHL
I
OHL
I
OLL
Low Level Output Voltage
High Level Output Voltage
Peak Sink Current
Peak Source Current
I
LO
= 160mA
I
LO
= -100mA, V
OHL
= V
DD
- V
LO
V
LO
= 0V
V
LO
= 12V
0.18
0.25
3
2
0.3
0.4
0.3
0.45
V
V
A
A
Parameter
Condition
Min
Typ
Max
Units
HO Gate Driver
V
OLH
V
OHH
I
OHH
I
OLH
Low Level Output Voltage
High Level Output Voltage
Peak Sink Current
Peak Source Current
I
HO
= 160mA
I
HO
= -100mA, V
OHH
= V
HB
– V
HO
V
HO
= 0V
V
HO
= 12V
0.22
0.25
3
2
0.3
0.4
0.3
0.45
V
V
A
A
Switching Specifications (Anti-Shoot-Through Circuitry)
t
LOOFF
V
LOOFF
t
HOON
t
HOOFF
V
SWth
t
LOON
t
LSOFF
t
SWTO
Delay between PWM going high
to LO going low
Voltage threshold for LO
MOSFET to be considered OFF
Delay between LO OFF to HO
going High
Delay between PWM going Low
to HO going low
Switch Node Voltage Threshold
when HO turns off
Delay between HO MOSFET
being considered off to LO
turning ON
Delay between LS going low
and LO turning OFF
Forced LO ON, if VLOTH is not
detected
C
L
= 1000pF
1
30
1.7
30
45
2.5
30
50
60
65
70
4
60
70
45
70
45
60
ns
V
ns
ns
V
ns
ns
ns
36
250
120
450
Switching Specifications
t
R
t
F
t
R
t
F
Either Output Rise Time (3V to
9V)
Either Output Fall Time (3V to
9V)
Either Output Rise Time (3V to
9V)
Either Output Fall Time (3V to
9V)
C
L
= 1000pF
C
L
= 1000pF
CL = 0.1µF
CL = 0.1µF
10
6
0.33
0.2
0.6
0.8
0.3
0.4
ns
ns
µs
µs
November 2006
4
M9999-112806
Micrel, Inc.
MIC4102
Electrical Characteristics (cont.)
Symbol
Parameter
Condition
Min
Typ
Max
Units
Switching Specifications (cont.)
t
PW
Minimum Input Pulse Width that
changes the output with LS=5V
Minimum Output Pulse Width
on HO with min pulse width on
PWM with LS=5V
Minimum Input Pulse Width that
changes the output with LS=0V
Minimum Output Pulse Width
on HO with min pulse width on
PWM with LS=0V
t
BS
Notes:
1. Exceeding the absolute maximum rating may damage the device.
2. The device is not guaranteed to function outside its operating rating.
3. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5kΩ in series with 100pF.
4. Specification for packaged product only.
5. All voltages relative to pin7, V
SS
unless otherwise specified.
6. Guaranteed by design. Not production tested.
C
L
=0
Note 6
C
L
=0
Note 6
C
L
=0
Note 6
C
L
=0
Note 6
40
60
ns
t
PW
15
ns
t
PW
13
20
ns
20
10
ns
Bootstrap Diode Turn-On or
Turn-Off Time
November 2006
5
M9999-112806
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