Datasheet> 器件分类 > 分立半导体> 晶体管> MS1076C

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MS1076C: 产品描述RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4; 产品类别分立半导体晶体管; 文件大小87KB，共6页; 制造商Microsemi; 官网地址https://www.microsemi.com

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MS1076C概述

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4

MS1076C规格参数

参数名称	属性值
厂商名称	Microsemi
包装说明	FLANGE MOUNT, O-PRFM-F4
针数	4
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
最大集电极电流 (IC)	16 A
集电极-发射极最大电压	35 V
配置	SINGLE
最高频带	VERY HIGH FREQUENCY BAND
JESD-30 代码	O-PRFM-F4
元件数量	1
端子数量	4
最高工作温度	200 °C
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	FLANGE MOUNT
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	RADIAL
晶体管元件材料	SILICON

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MS1076

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

Features

•

30 MHz

28 VOLTS

GOLD METALLIZATION

OUT

= 220 W PEP

= 12 dB GAIN MINIMUM

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1076 is a 28 volt epitaxial NPN silicon planar transistor

designed primarily for SSB and VHF communications. This

device utilizes an emitter ballasted die geometry for maximum

ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C)

Symbol

CBO

CEO

EBO

DISS

STG

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Device Current

Power Dissipation

Junction Temperature

Storage Temperature

Value

4.0

250

+200

- 65 to +150

Unit

°C

Thermal Data

TH(J-C)

Junction - Case Thermal Resistance

0.7

°C/W

Rev A: October 2009

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at

www.microsemi.com

or contact our factory direct.

MS1076C相似产品对比

	MS1076C	MS1076G	MS1076H	MS1076F	MS1076I	MS1076E	MS1076D	MS1076A
描述	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4
厂商名称	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
包装说明	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4
针数	4	4	4	4	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
最大集电极电流 (IC)	16 A	16 A	16 A	16 A	16 A	16 A	16 A	16 A
集电极-发射极最大电压	35 V	35 V	35 V	35 V	35 V	35 V	35 V	35 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最高频带	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 代码	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4
元件数量	1	1	1	1	1	1	1	1
端子数量	4	4	4	4	4	4	4	4
最高工作温度	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

MS1076C

MS1076C概述

MS1076C规格参数

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