MA4P7464F-1072T
Non Magnetic SMQ MELF PIN Diode
Features
♦
Non-Magnetic Package Suitable for MRI
Applications
♦
Rectangular MELF SMQ Ceramic Package
♦
Hermetically Sealed
♦
Low Rs for Low Series Loss
♦
Long
τ
L
for Lower Intermodulation Distortion
♦
Low C
j
for High Series Isolation
♦
High Average Incident Power Handling
♦
RoHS Compliant
V2
Description
The MA4P7464F-1072T is a surface mountable
PIN diode in a non-magnetic,
Metal Electrode
Leadless Faced
(MELF) package. The device
incorporates M/A-COM Technology Solutions
time proven HIPAX technology to produce a low
inductance ceramic package with no ribbons or
whisker wires. Incorporated in the package is a
hard glass passivated, CERMACHIP™ PIN chip
that is full face bonded on both the cathode and
anode to maximize surface area for the lowest
electrical and thermal resistance. The package
utilizes a non-magnetic plating process that
provides for a package with extremely low
permeability. The MA4P7464F-1072T has been
comprehensively characterized both electrically
and mechanically to ensure repeatable and
predictable performance. The non-magnetic
MA4P7464F-1072T is the electrical equivalent of
its magnetic counterpart the MA4P7004F-1072T.
Designed for Automated Assembly
These SMQ PIN diodes are designed for high
volume tape and reel assembly. The rectangular
package design provides for highly efficient
automatic pick and place assembly techniques. The
parallel flat surfaces are suitable for key jaw or
vacuum pickup. All solderable surfaces are tin plated
and compatible with reflow and vapor phase
soldering methods.
Absolute Maximum Ratings
1
@ 25°C
Parameter
Operating Temperature
Storage Temperature
Absolute Maximum
-65 °C to +125°C
-65 °C to +150°C
+175 °C Continuous
+265°C for 10 seconds
+ 50 dBm C.W.
+ 250 mA
l - 400 V l
Applications
This diode is well suited for use in low loss, low
distortion, high power switching circuits and can
be used in high magnetic field environments at HF
through UHF frequencies. The low thermal
resistance of this device provides excellent
performance at high RF power incident levels, up
to 100 watts CW. This device is designed to meet
the most demanding electrical and mechanical
MRI environments.
Diode Junction Temperature
Diode Mounting Temperature
RF C.W. Incident Power
Forward D.C. Current
Reverse D.C. Voltage @ -10uA
1. Exceeding these limits may cause permanent damage.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4P7464F-1072T
Non Magnetic SMQ MELF PIN Diode
Electrical Specifications @ +25 °C
Parameter
Forward Voltage (Maximum)
Voltage Rating (Minimum)
Total Capacitance (Maximum)
Series Resistance (Maximum)
Parallel Resistance (Minimum)
Carrier Lifetime (Nominal)
I-Region Length (Nominal)
C.W. Thermal Resistance (Maximum)
Power Dissipation in Free Air (Maximum)
Power Dissipation (Maximum)
V2
Symbol
V
F
V
R
C
T
R
S
R
P
τ
L
μm
θ
W
P
D
Condition
I
F
= +100 mA
Ir = -10 uA
-100 V @ 100 MHz
+100 mA @ 100 MHz
-10 V @ 100 MHz
+6 mA / -10 mA @
(50% - 90% Voltage)
-
-
I
F
= +100 mA
I
F
= +100 mA
Unit Value
1.0 V
DC
l – 400 l V
DC
0.8 pF
0.5 Ohms
75 K
Ω
4.5
us
100
μm
20 °C/W
2.5 W
7.5 W
Environmental Capability
MELF devices are appropriate for use in industrial and military applications and can be screened to meet the
environmental requirements of MIL-STD-750, MIL-STD-202 as well as other military standards. The table below
lists some of the MIL-STD 750 tests the device is designed to meet.
Test
Method
Description
+150°C, for 340 Hours
-65°C to +150°C, 20 Cycles
80% of rated V
B
, +150°C, for 96 Hours
No Initial Conditioning, 85% RH, +85°C
Dye Penetrant Visual
20,000G’s, 60Hz, x, y, z axis
Test Temperature = +245°C
High Temperature
may cause
1. Exceeding these limits
Storage
permanent damage.
1031
Temperature Shock
HTRB
Moisture Resistance
Gross Leak
Vibration Fatigue
Solderability
1051
1038
1021
1071 Cond. E
2046
2026
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4P7464F-1072T
Non Magnetic SMQ MELF PIN Diode
Typical Electrical Performance @ +25°C
MA4P7464F-1072T Rs vs I
1000
V2
Rs_100 MHz
100
Rs (Ohms)
10
Rs_1000 MHz
1
0.1
0.01
0.10
1.00
I ( mA )
10.00
100.00
M A 4 P 7 4 6 4 F -1 0 7 2 T R p v s V o lta g e
1 .0 0 E + 0 6
1 .0 0 E + 0 5
1 .0 0 E + 0 4
1 .0 0 E + 0 3
1 .0 0
1 0 .0 0
V o lta g e ( V )
1 0 0 .0 0
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
Rp (Ohms)
1500 M H z
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4P7464F-1072T
Non Magnetic SMQ MELF PIN Diode
Typical Electrical Performance @ +25°C
M A 4 P 7 4 6 4 F -1 0 7 2 T C t v s V o lta g e
10
V2
1500 M H z
Ct (pF)
1
100 M H z
0 .1
1 .0 0
1 0 .0 0
V o lta g e ( V )
1 0 0 .0 0
MA4P7464F-1072T Ls vs Frequency
1
Ls (nH)
Ls_50 m A
0.1
100.0
1000.0
F ( M Hz )
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4P7464F-1072T
Non Magnetic SMQ MELF PIN Diode
Typical Non-Magnetic Performance
Comparison of Magnetic Moment vs H Field for MA4P7400-1072T Non-Magnetic Series
& MA4P1250-1072T Magnetic Devices
2.50E-02
V2
2.00E-02
Device Magnetic Moment (EMU)
1.50E-02
MA4P1250-1072T Magnetic
1.00E-02
5.00E-03
0.00E+00
-5.00E-03
MA4P7400-1072T Non-Magnetic Series
-1.00E-02
-1.50E-02
-2.00E-02
-2.50E-02
-1.0E+04
-8.0E+03
-6.0E+03
-4.0E+03
-2.0E+03
0.0E+00
2.0E+03
4.0E+03
6.0E+03
8.0E+03
1.0E+04
H Field ( Oersteads )
Typical Magnetic Properties of Non-Magnetic MA4P7464F-1072T Device
vs.
Conventional MA4P1250-1072T Magnetic Device
Magnetic Property
Saturation Moment (EMU) @ H = H
MAX
Oersteads
Remanance Moment (EMU) @ H = 0 Oersteads
Coercivity (Oersteads) @ EMU = 0 Moment
MA4P7464F-1072T
Value
2.3 x E-4
4.2 x E-8
1
MA4P1250-1072T
Value
2.1 x E-2
7.1 x E-3
59.2
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
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