电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MA4P7441F-1091T_2

产品描述SILICON, PIN DIODE
产品类别半导体    分立半导体   
文件大小164KB,共7页
制造商MACOM
官网地址http://www.macom.com
下载文档 全文预览

MA4P7441F-1091T_2概述

SILICON, PIN DIODE

文档预览

下载PDF文档
MA4P7441F-1091T
Non Magnetic SMQ MELF PIN Diode
Features
Non-Magnetic Package Suitable for MRI
Applications
Rectangular MELF SMQ Ceramic Package
Hermetically Sealed
Low Rs for Low Series Loss
Long
τ
L
for Lower Intermodulation Distortion
Low C
j
for High Series Isolation
High Average Incident Power Handling
RoHS Compliant
V2
Description
The MA4P7441F-1091T is a surface mountable
PIN diode in a non-magnetic,
Metal Electrode
Leadless Faced
(MELF) package. The device
incorporates M/A-COM Technology Solutions
time proven HIPAX technology to produce a low
inductance ceramic package with no ribbons or
whisker wires. Incorporated in the package is a
hard glass passivated, CERMACHIP™ PIN chip
that is full face bonded on both the cathode and
anode to maximize surface area for the lowest
electrical and thermal resistance. The package
utilizes a non-magnetic plating process that
provides for a package with extremely low
permeability. The MA4P7441F-1091T has been
comprehensively characterized both electrically
and mechanically to ensure repeatable and
predictable performance. The non-magnetic
MA4P7441F-1091T is the electrical equivalent of
its magnetic counterpart the MA4P4001F-1091T.
Designed for Automated Assembly
These SMQ PIN diodes are designed for high
volume tape and reel assembly. The rectangular
package design provides for highly efficient
automatic pick and place assembly techniques. The
parallel flat surfaces are suitable for key jaw or
vacuum pickup. All solderable surfaces are tin plated
and compatible with reflow and vapor phase
soldering methods.
Absolute Maximum Ratings
1
@ 25°C
Parameter
Operating Temperature
Storage Temperature
Absolute Maximum
-65 °C to +125°C
-65 °C to +150°C
+175 °C Continuous
+235°C for 10 seconds
+ 53 dBm C.W.
+ 500 mA
l - 100 V l
Applications
This diode is well suited for use in low loss, low
distortion, high power switching circuits and can
be used in high magnetic field environments at HF
through UHF frequencies. The low thermal
resistance of this device provides excellent
performance at high RF power incident levels, up
to
200
watts CW. This device is designed to meet
the most demanding electrical and mechanical
MRI environments.
Diode Junction Temperature
Diode Mounting Temperature
RF C.W. Incident Power
Forward D.C. Current
Reverse D.C. Voltage @ -10uA
1. Exceeding these limits may cause permanent damage.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
India
Tel: +91.80.43537383
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1554  2789  1190  2249  1814  32  57  24  46  37 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved