MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
FEATURES
♦
♦
♦
♦
♦
Ultra Broad Bandwidth: 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.5 dB Insertion Loss at 50GHz
46 dB Isolation at 50 GHz
Low Current consumption.
•
-10mA /1.35V for low loss state
•+10mA
/1.35V for Isolation state
♦
Silicon Nitride Passivation
♦
Polymer Scratch protection
♦
RoHS Compliant
V5
DESCRIPTION
M/A-COM’s, MA4AGSW1A is an Aluminum-Gallium-
Arsenide, single pole, single throw (SPST), absorptive
PIN diode switch. The switch features enhanced AlGaAs
anodes which are formed using M/A-COM’s patented
hetero-junction technology. AlGaAs technology produces
a switch with less loss than a device fabricated using
conventional GaAs processes. As much as a 0.3dB
reduction in insertion loss can be realized at 50GHz. This
device is fabricated on an OMCVD epitaxial wafer using
a process designed for high device uniformity and
extremely low parasitics. The PIN diodes within the chip
exhibit low series resistance, low capacitance, and fast
switching speed. They are fully passivated with silicon
nitride and have an additional polymer layer for scratch
protection. The protective coating prevents damage
during handling and assembly to the diode junction as
well as the anode air-bridges . Off chip bias circuitry will
be required.
Yellow areas indicate bond pads
APPLICATIONS
The output port of this device, J2, is terminated into 50Ω
during isolation mode, which allows this signal to be
absorbed rather than reflected back. This functionality
makes it ideal for instrumentation and radar applications.
An absorptive switch can be added to other AlGaAs
reflective switches to improve isolation VSWR and
increase isolation magnitude. The ultra low capacitance
of the PIN diodes makes it ideal for usage in low loss and
high isolation microwave and millimeter wave switch
designs through 70 GHz. The lower series resistance of
the AlGaAs diodes reduces the total insertion loss and
distortion of the device. AlGaAs PIN switches are used in
applications such as switching arrays for radar systems,
radiometers, and other multi-function components.
Absolute Maximum Ratings @ T
AMB
= +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Assembly Temperature
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+300°C < 10 sec
+175°C
Maximum combined operating conditions for RF Power, D.C. bias,
and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85°C.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
V5
Electrical Specifications @ T
AMB
= 25°C
(On-wafer measurements)
Parameter
Insertion Loss
Ports
J1 - J2
Bias Conditions
Bias J1 — -1.35V/10mA
Bias B — -1.35V/0mA
Port J1 — +1.35V/10mA
Bias B — +1.35V/10mA
Port J1 — -1.35V/10mA
Bias B — -1.35V/0mA
Port J1 — -1.35V/10mA
Bias B — -1.35V/0mA
Port J1 — +1.35V/10mA
Bias B — +1.35V/10mA
±5V PIN TTL Driver
1MHz Repetition Frequency.
Frequency Typical
50Ghz
1.2dB
Isolation
J1 - J2
50Ghz
30dB
Input return Loss
Output Return Loss
(Insertion loss))
Output Return Loss
(Isolation)
Switching Speed
(10% - 90% RF Voltage)
J1- J2 (Terminated by 50Ω)
50Ghz
15dB
J2- J1 (Terminated by 50Ω)
50Ghz
18dB
J2
50Ghz
18dB
J1 - J2
10GHz
10nS
Notes:
1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL
compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and
a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times.
2. Bias nodes, J1 and B may be connected together
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
Typical RF Performance (Probed on Wafer)
V5
Isolation
Isol (dB)
Freq. (GHz)
Input Return Loss
Loss (dB)
Freq. (GHz)
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
Typical RF Performance (Probed on wafer)
V5
Output Return Loss (Insertion Loss State)
Loss (dB)
Freq. (GHz)
Output Return Loss (Isolation Loss State)
Loss (dB)
Freq. (GHz)
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
Operation of the MA4AGSW1A Switch
An external bias network and D.C return is required for successful operation of the MA4AGSW1A absorptive
SPST AlGaAs PIN diode switch. The backside area of the die is the RF and D.C. ground return plane. In the
low loss state, the series diode is forward biased with negative current at D.C. Bias 1 and the match diode is
biased at 0V at D.C. Bias B. In the isolated state, the shunt diode and the match diode are both forward biased
at D.C. Bias B1 and D.C. Bias B (series diode becomes reverse biased ). This isolation state bias results in a
good 50Ω match into Port J2. Typical driver connections are shown in Table I below. The bias network design
shown in the schematic should yield > 30dB RF to DC isolation.
V5
MA4AGSW1A Schematic with Bias Network for 10-30Ghz
DC Bias
B1
MA4AGSW1A Chip
10 pF
4.7 nH
DC and RF ground return
on backside of chip
10 pF
10 pF
Matching
diode bias
MA4AGSW1A Chip
Notes:
1. D.C. Bias 1 and D.C. Bias B nodes can be connected together.
2. Diode junction forward bias voltage,
Δ
Vf @ 10 mA ~ 1.35 V @ + 25° C.
TYPICAL DRIVER CONNECTIONS
J1-J2 Low Loss : Good VSWR at J1 & J2 J1-J2 Isolation : Good VSWR at J2
5
D.C. Bias 1 = -10mA
D.C. Bias B = 0V
D.C. Bias 1 = +10mA
D.C. Bias B = +10mA
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
