MA4AGSW3
SP3T AlGaAs PIN Diode Switch
Rev. V7
FEATURES
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.8 dB Insertion Loss
31 dB Isolation at 50 GHz
Low Current consumption
-10mA for low loss state
+10mA for Isolation state
M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible
DESCRIPTION
The MA4AGSW3 is an Aluminum-Gallium-Arsenide,
single pole, triple throw (SP3T), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using M/A-COM Tech’s patented hetero-
junction technology. This technology produces a
switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode
air-bridges during handling and assembly. Off chip
bias circuitry is required.
Yellow areas indicate bond pads
Absolute Maximum Ratings
@ T
AMB
= +25°C (Unless Otherwise Noted)
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+150°C
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW3
SP3T AlGaAs PIN Diode Switch
Rev. V7
Electrical Specifications @ T
A
= 25°C, +/-10mA bias current
(On-wafer measurements)
RF SPECIFICATIONS
PARAMETER
INSERTION LOSS
FREQUENCY BAND
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
10GHZ
MIN
---
---
38
24
---
---
---
---
---
TYP
0.6
0.8
45
31
21
24
26
20
20
MAX
0.7
1.1
---
---
---
---
---
---
---
UNITS
dB
dB
dB
dB
dB
dB
dB
dB
nS
ISOLATION
INPUT RETURN LOSS
OUTPUT RETURN LOSS
SWITCHING SPEED
( 10 % - 90 % RF VOLTAGE )
*
*Note:
Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL
compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and
a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW3
SP3T AlGaAs PIN Diode Switch
Rev. V7
Typical R.F. Performance (Probed on Wafer) @ +25°C
IN S E R T IO N L O S S @ -10 m A
0
-0 .2
IL ( dB )
-0 .4
-0 .6
-0 .8
-1
0 .0 0
1 0 .00
2 0 .00
3 0.0 0
40 .0 0
5 0 .0 0
F R E Q UE NC Y ( G Hz )
J2
J3
J4
ISOLATION @ +10 mA
0
-10
-20
-30
-40
-50
-60
-70
-80
0.00
IRL ( dB )
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J2
J3
J4
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW3
SP3T AlGaAs PIN Diode Switch
Rev. V7
Typical RF Performance (Probed on wafer) @ +25°C
INPUT RETURN LOSS @ -10 mA
0
-5
-10
-15
-20
-25
-30
-35
-40
0.00
IRL ( dB )
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J2
J3
J4
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW3
SP3T AlGaAs PIN Diode Switch
Rev. V7
Operation of the MA4AGSW3 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the
remaining isolated switching ports is required for the operation of the MA4AGSW3, AlGaAs, PIN switch. The
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port
J1. The forward bias voltage at J2, J3 & J4 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply
current of ± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. While for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The
bias network design shown below should yield > 30 dB RF to DC Isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown below. Refer to datasheets for the
MA4BN1840-1
and
MA4BN1840-2
for additional information.
The lowest insertion loss, P1dB, IP
3
, and switching speed is achieved by using a voltage pull-up resistor in the DC
return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a
standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW3 Schematic with a Typical External 2-18 GHz Bias Network
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT)
J2
-10mA
+10mA
+10mA
5
CONDITION OF RF OUTPUT
J2-J1
Low Loss
Isolation
Isolation
J3-J1
Isolation
Low Loss
Isolation
J4-J1
Isolation
Isolation
Low Loss
J3
+10mA
-10mA
+10mA
J4
+10mA
+10mA
-10mA
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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