电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RU2BV1

产品描述Rectifier Diode, 1 Element, 1A, Silicon
产品类别分立半导体    二极管   
文件大小235KB,共5页
制造商SANKEN
官网地址http://www.sanken-ele.co.jp/en/
下载文档 详细参数 选型对比 全文预览

RU2BV1概述

Rectifier Diode, 1 Element, 1A, Silicon

RU2BV1规格参数

参数名称属性值
厂商名称SANKEN
包装说明O-PALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-PALF-W2
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
最大反向恢复时间0.4 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL

RU2BV1文档预览

SANKEN ELECTRIC CO., LTD.
RU2B
1. Scope
The present specifications shall apply to an RU2B.
2. Outline
Type
Structure
Applications
Silicon Diode
Resin Molded
High Frequency Rectification
3. Flammability
UL94V-0(Equivalent)
040708
1/5
61426-01
SANKEN ELECTRIC CO., LTD.
4. Absolute maximum ratings
No.
1
2
3
4
5
6
7
Item
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
Symbol
Unit
Rating
RU2B
Conditions
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
V
V
A
A
A
2
s
°C
°C
850
800
1.0
20
2
-40~+150
-40~+150
Refer to Derating of 7
10msec.
Half sinewave, one shot
1msec≤t≤10msec
5. Electrical characteristics (Ta=25°C
,unless
otherwise specified)
No.
1
2
3
Item
Symbol
Unit
Value
Conditions
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current Under
High Temperature
V
F
I
R
H½I
R
t
rr
1
V
uA
uA
ns
ns
°C /W
1.5 max.
10 max.
300 max.
400 max.
180 max.
15 max.
I
F
=1.0A
V
R
=V
RM
V
R
=V
RM
, T
j
=100°C
I
F
=I
RP
=10mA
90% Recovery point, T
j
=25°C
I
F
=10mA,I
RP
=20mA
75% Recovery point, T
j
=25°C
Between Junction and Lead
4
Reverse Recovery Time
t
rr
2
5
Thermal Resistance
R
th(j-l)
040708
2/5
61426-01
SANKEN ELECTRIC CO., LTD.
6. Characteristics
RU2B
I
F(AV)
- P
F
2
Tj=150°C
t
T
Forward Power Dissipation (W)
t/T=1/6
t/T=1/3,sinewave
P
F
(W)
1
t/T=1/2
DC
0
0.0
0.5
I
F(AV)
(A)
1.0
Average Forward Current (A)
V
R
- P
R
3.0
Tj=150°C
t
T
Reverse Power Dissipation (W)
2.0
1-t/T=5/6
P
R
(W)
1-t/T=2/3
1.0
1-t/T=1/2
sinewave
0.0
0
200
400
V
R
(V)
600
800
Reverse Voltage (V)
040708
3/5
61426-01
SANKEN ELECTRIC CO., LTD.
7. Derating
RU2B
T
C
- I
F(AV)
2.0
V
R
=800(V)
t/T=1/6
Average Forward Current (A)
t/T=1/3
t/T=1/2
DC
I
F(AV)
(A)
1.0
sinewave
Tj=150°C
t
T
0.0
50
100
Lead Temperature (
°C
)
150
T
C
(°C)
040708
4/5
61426-01
SANKEN ELECTRIC CO., LTD.
8. Package information
8-1 Package type, physical dimensions and material
62.5
±0.7
7.2
±0.2
RU2B
※3
±0.05
φ4.0
±0.2
※1
※2
*1
*2
*3
The allowance position of Body against the center of whole lead wire is 0.5mm(max.)
The centric allowance of lead wire against center of physical body is 0.3mm(max.)
The burr may exit up to 2mm from the body of lead
φ0.78
Dimensions in
8-2 Appearance
The body shall be clean and shall not bear any stain, rust or flaw.
8-3 Marking
Type number:RU2B
Lot number 1
First digit: Last digit of Year
Second digit: Month
From 1 to 9 for Jan. to Sep.
O for Oct., N for Nov., and D for Dec.
Lot number 2 (ten days)
½:
Top of the month
½½:
Middle of month
½½½:
End of month
カ½ード表示
Cathode Band
040708
5/5
61426-01

RU2BV1相似产品对比

RU2BV1 RU2BV
描述 Rectifier Diode, 1 Element, 1A, Silicon Rectifier Diode, 1 Element, 1A, Silicon
厂商名称 SANKEN SANKEN
包装说明 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
外壳连接 ISOLATED ISOLATED
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-PALF-W2 O-PALF-W2
元件数量 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -40 °C -40 °C
最大输出电流 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND
封装形式 LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified
最大反向恢复时间 0.4 µs 0.4 µs
表面贴装 NO NO
端子形式 WIRE WIRE
端子位置 AXIAL AXIAL

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2855  2334  887  1640  1189  54  27  42  28  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved