电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SFC05-5.WM

产品描述Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, MO-211, CSP-6
产品类别分立半导体    二极管   
文件大小209KB,共7页
制造商SEMTECH
官网地址http://www.semtech.com
下载文档 详细参数 选型对比 全文预览

SFC05-5.WM概述

Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, MO-211, CSP-6

SFC05-5.WM规格参数

参数名称属性值
是否无铅含铅
厂商名称SEMTECH
零件包装代码DSBGA
包装说明FLIP CHIP, MO-211, CSP-6
针数6
Reach Compliance Codeunknown
ECCN代码EAR99
最小击穿电压6 V
配置COMMON ANODE, 5 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码MO-211BB
JESD-30 代码R-PBGA-B6
最大非重复峰值反向功率耗散200 W
元件数量5
端子数量6
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式GRID ARRAY
极性UNIDIRECTIONAL
认证状态Not Qualified
最大重复峰值反向电压5 V
表面贴装YES
技术AVALANCHE
端子形式BALL
端子位置BOTTOM

SFC05-5.WM文档预览

PROTECTION PRODUCTS
Description
The SFC05-5 is a five line flip chip TVS array. They are
state-of-the-art devices that utilize solid-state silicon-
avalanche technology for superior clamping perfor-
mance and DC electrical characteristics. The SFC
series TVS diodes are designed to protect sensitive
semiconductor components from damage or latch-up
due to electrostatic discharge (ESD) and other voltage
induced transient events.
The SFC05-5 is a 6-bump, 0.5mm pitch flip chip array
with a 3x2 bump grid. It measures 1.5 x 1.0 x
0.65mm. This small outline makes the SFC05-5
especially well suited for portable applications. CSP
TVS devices are compatible with current pick and place
equipment and assembly methods.
Each device will protect up to five data or I/O lines.
The flip chip design results in lower inductance, virtually
eliminating voltage overshoot due to leads and inter-
connecting bond wires. They may be used to meet the
ESD immunity requirements of IEC 61000-4-2, Level 4
(±15kV air, ±8kV contact discharge).
ChipClamp
ΤΜ
Flip Chip TVS Diode Array
PRELIMINARY
Features
200 Watts peak pulse power (tp = 8/20µs)
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 20A (8/20µs)
Small chip scale package requires less board space
Low profile (< 0.65mm)
No need for underfill material
Protects five I/O or data lines
Low clamping voltage
Working voltage: 5V
Solid-state silicon-avalanche technology
SFC05-5
Mechanical Characteristics
JEDEC MO-211, 0.50 mm Pitch Flip Chip Package
Non-conductive top side coating
Marking : Marking Code
Packaging : Tape and Reel
Applications
Cell Phone Handsets and Accessories
Personal Digital Assistants (PDA’s)
Notebook and Hand Held Computers
Portable Instrumentation
Smart Cards
MP3 Players
GPS
Device Dimensions
Schematic & PIN Configuration
SFC05-5 Maximum Dimensions (mm)
3 x 2 Grid CSP TVS (Bottom View)
Revision 08/02/04
1
www.semtech.com
SFC05-5
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Peak Pulse Power (tp = 8/20µs)
Peak Pulse Current (tp = 8/20µs)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Operating Temperature
Storage Temperature
Symbol
P
p k
I
P P
V
ESD
T
J
T
STG
Value
200
20
>25
>15
-55 to +125
-55 to +150
PRELIMINARY
Units
Watts
A
kV
°C
°C
Electrical Characteristics (T=25
o
C)
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamp ing Voltage
Clamp ing Voltage
Junction Cap acitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
j
Conditions
Minimum
Typical
Maximum
5
Units
V
V
I
t
= 1mA
V
RWM
= 5V, T=25°C
I
PP
= 5A, tp = 8/20µs
Any I/O to Ground
I
PP
= 20A, tp = 8/20µs
Any I/O to Ground
V
R
= 0V, f = 1MHz
6
10
9.5
11
350
µA
V
V
pF
2004 Semtech Corp.
2
www.semtech.com
SFC05-5
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
Peak Pulse Power - P
pk
(kW)
PRELIMINARY
Power Derating Curve
110
100
% of Rated Power or
PP
I
90
80
70
60
50
40
30
20
10
1
0.1
0.01
0.1
1
10
Pulse Duration - tp (µs)
100
1000
0
0
25
50
75
100
o
125
150
Ambient Temperature - T
A
( C)
Pulse Waveform
110
100
90
80
Percent of I
PP
70
60
50
40
30
20
10
0
0
5
10
15
Time (µs)
20
25
30
td = I
PP
/2
e
-t
Clamping Voltage vs. Peak Pulse Current
Waveform
Parameters:
tr = 8µs
td = 20µs
10.00
9.00
Clamping Voltage - V
c
(V)
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
0
5
10
15
20
25
Peak Pulse Current - I
PP
(A)
Waveform
Parameters:
tr = 8µs
td = 20µs
ESD Clamping (8kV Contact Discharge)
2004 Semtech Corp.
3
www.semtech.com
SFC05-5
PROTECTION PRODUCTS
Applications Information
Device Connection Options
The SFC05-5 has solder bumps located in a 3 x 2
matrix layout on the active side of the device. The
bumps are designated by the numbers 1 - 3 along the
horizontal axis and letters A - B along the vertical axis.
The lines to be protected are connected at bumps A1,
B1, A2, A3, and B3. Bump B2 is connected to ground.
All path lengths should be kept as short as possible to
minimize the effects of parasitic inductance in the
board traces.
Flip Chip TVS
Flip chip TVS devices are wafer level chip scale pack-
ages. They eliminate external plastic packages and
leads and thus result in a significant board space
savings. Manufacturing costs are minimized since they
do not require an intermediate level interconnect or
interposer layer for reliable operation. They are com-
patible with current pick and place equipment further
reducing manufacturing costs. Certain precautions
and design considerations have to be observed how-
ever for maximum solder joint reliability. These include
solder pad definition, board finish, and assembly
parameters.
Printed Circuit Board Mounting
Non-solder mask defined (NSMD) land patterns are
recommended for mounting the SFC05-5. Solder
mask defined (SMD) pads produce stress points near
the solder mask on the PCB side that can result in
solder joint cracking when exposed to extreme fatigue
conditions. The recommended pad size is 0.225 ±
0.010 mm with a solder mask opening of 0.350 ±
0.025 mm.
Grid Courtyard
The recommended grid placement courtyard is 1.3 x
1.8 mm. The grid courtyard is intended to encompass
the land pattern and the component body that is
centered in the land pattern. When placing parts on a
PCB, the highest recommended density is when one
courtyard touches another.
To Connector
PRELIMINARY
Device Schematic and Pin Configuration
Layout Example
To Protected IC
Ground
To Protected IC
NSMD Package Footprint
2004 Semtech Corp.
4
www.semtech.com
SFC05-5
PROTECTION PRODUCTS
Applications Information
(Continued)
Printed Circuit Board Finish
A uniform board finish is critical for good assembly
yield. Two finishes that provide uniform surface coat-
ings are immersion nickel gold and organic surface
protectant (OSP). A non-uniform finish such as hot air
solder leveling (HASL) can lead to mounting problems
and should be avoided.
Stencil Design
A properly designed stencil is key to achieving ad-
equate solder volume without compromising assembly
yields. A 0.100mm thick, laser cut, electro-polished
stencil with 0.275mm square apertures and rounded
corners is recommended.
Reflow Profile
The flip chip TVS can be assembled using the reflow
requirements for IPC/JEDEC standard J-STD-020 for
assembly of small body components. During reflow,
the component will self-align itself on the pad.
Circuit Board Layout Recommendations for Suppres-
sion of ESD
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
Place the TVS near the input terminals or connec-
tors to restrict transient coupling.
Minimize the path length between the TVS and the
protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
Never run critical signals near board edges.
Use ground planes whenever possible.
Assembly Guideline for Pb-Free Soldering
The following are recommendations for the assembly
of this device:
Assembly Parameter
Solder Ball Comp osition
Solder Stencil Design
Solder Stencil Thickness
Solder Paste Comp osition
Solder Paste Typ e
Solder Reflow Profile
PCB Solder Pad Design
PCB Pad Finish
R ecommendation
95.5Sn/3.8Ag/0.7Cu
Same as the SnPb design
0.100 mm (0.004")
Sn Ag (3-4) Cu (0.5-0.9)
Typ e 4 size sp here or smaller
p er JEDEC J-STD-020
Same as the SnPb Design
OSP or AuN i
PRELIMINARY
Stencil Design
2004 Semtech Corp.
5
www.semtech.com

SFC05-5.WM相似产品对比

SFC05-5.WM SFC05-5.TC SFC05-5.TF SFC05-5.WMT SFC05-5.TM
描述 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, MO-211, CSP-6 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, LEAD FREE, FLIP CHIP, MO-211, CSP-6 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6
是否无铅 含铅 含铅 含铅 不含铅 含铅
厂商名称 SEMTECH SEMTECH SEMTECH SEMTECH SEMTECH
零件包装代码 DSBGA DSBGA DSBGA DSBGA DSBGA
包装说明 FLIP CHIP, MO-211, CSP-6 FLIP CHIP, CSP-6 FLIP CHIP, CSP-6 LEAD FREE, FLIP CHIP, MO-211, CSP-6 FLIP CHIP, CSP-6
针数 6 6 6 6 6
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最小击穿电压 6 V 6 V 6 V 6 V 6 V
配置 COMMON ANODE, 5 ELEMENTS COMMON ANODE, 5 ELEMENTS COMMON ANODE, 5 ELEMENTS COMMON ANODE, 5 ELEMENTS COMMON ANODE, 5 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码 MO-211BB MO-211BB MO-211BB MO-211BB MO-211BB
JESD-30 代码 R-PBGA-B6 R-PBGA-B6 R-PBGA-B6 R-PBGA-B6 R-PBGA-B6
最大非重复峰值反向功率耗散 200 W 200 W 200 W 200 W 200 W
元件数量 5 5 5 5 5
端子数量 6 6 6 6 6
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子形式 BALL BALL BALL BALL BALL
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
是否Rohs认证 - 不符合 不符合 - 不符合
最大钳位电压 - 11 V 11 V - 9.5 V
JESD-609代码 - e0 e0 - e0
峰值回流温度(摄氏度) - 240 240 - 240
端子面层 - TIN LEAD TIN LEAD - TIN LEAD
处于峰值回流温度下的最长时间 - 10 10 - 10
LPC1114F样片申请-接受申请中……
名称:LPC1114F样片申请 活动赞助: 深圳伟博创科技有限公司 活动时间:2010年7月13日~2010年8月13日 申请要求:1、EEWORLD全体会员;2、秀创意:详尽说明利用该芯片可进行的DIY项目。 ......
EEWORLD社区 NXP MCU
请教麻宝华老师Snooper
我用麻宝华老师的Snooper 是否要用你们专用的读卡器呢?我有SIM卡读卡器 但软件连不上 我想查看 执行 STK菜单所发出去的短信内容 要怎么操作呢 谢谢 比如STK彩单 “移动梦网”下的“天气 ......
lanmandeyuye 嵌入式系统
关于wince下 KernelIoControl
想问下,下面这个KernelIoControl调用什么意思啊,查了下pb下的解释看不怎么明白啊 #define IOCTL_POCKETSTOREII_CMD CTL_CODE(FILE_DEVICE_HAL, 4080, METHOD_BUFFERED, FILE_ANY_ACCESS) ......
轩辕情伤 嵌入式系统
哪个有SDHC协议
SD卡的协议比较好找. 但SDHC的协议就好难找了. 我找了两天也没找到. 哪个有SDHC协议? 能否传份给我? 谢谢! cokeliu@ev-sparkle.com...
zjwen 嵌入式系统
关于液晶SSD1289显示和OV7670的奇怪问题
最近一直在弄OV7670驱动程序,出现了一些让我很困惑的问题,想请教大家 81436我用取模软件画了个320*240的宽度是一个像素的矩形,这样就应该正好能点亮液晶屏的四个边,但实际效果却是上图这样 ......
wp0624 单片机
【为C2000做贡献】基于TMX320F28335的3机联动PMSM驱动系统的研究
基于TMX320F28335的3机联动PMSM驱动系统的研究...
0212009623 微控制器 MCU

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 326  2400  568  1197  2702  7  49  12  25  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved