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SM0-67206EV-30SB/SC

产品描述FIFO, 16KX9, 30ns, Asynchronous, CMOS, DIE
产品类别存储    存储   
文件大小104KB,共16页
制造商TEMIC
官网地址http://www.temic.de/
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SM0-67206EV-30SB/SC概述

FIFO, 16KX9, 30ns, Asynchronous, CMOS, DIE

SM0-67206EV-30SB/SC规格参数

参数名称属性值
厂商名称TEMIC
包装说明DIE
Reach Compliance Codeunknown
最长访问时间30 ns
周期时间40 ns
JESD-30 代码X-XUUC-N
内存密度147456 bit
内存宽度9
功能数量1
字数16384 words
字数代码16000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织16KX9
可输出NO
封装主体材料UNSPECIFIED
封装形状UNSPECIFIED
封装形式UNCASED CHIP
并行/串行PARALLEL
认证状态Not Qualified
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子形式NO LEAD
端子位置UPPER

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M67206E
16 K

9 High Speed CMOS Parallel FIFO Rad Tolerant
Introduction
The M67206E implements a first-in first-out algorithm,
featuring asynchronous read/write operations. The FULL
and EMPTY flags prevent data overflow and underflow.
The Expansion logic allows unlimited expansion in word
size and depth with no timing penalties. Twin address
pointers automatically generate internal read and write
addresses, and no external address information are
required for the TEMIC FIFOs. Address pointers are
automatically incremented with the write pin and read
pin. The 9 bits wide data are used in data communications
applications where a parity bit for error checking is
necessary. The Retransmit pin reset the Read pointer to
zero without affecting the write pointer. This is very
useful for retransmitting data when an error is detected in
the system.
Using an array of eight transistors (8 T) memory cell, the
M67206E combine an extremely low standby supply
current (typ = 0.1
µA)
with a fast access time at 15 ns
over the full temperature range. All versions offer battery
backup data retention capability with a typical power
consumption at less than 2
µW.
The M67206E is processed according to the methods of
the latest revision of the MIL STD 883 (class B or S), ESA
SCC 9000 or QML.
Features
D
D
D
D
First-in first-out dual port memory
16384
×
9 organisation
Fast Flag and access times: 15, 30 ns
Wide temperature range : – 55
°C
to + 125
°C
D
D
D
D
D
D
D
D
D
Fully expandable by word width or depth
Asynchronous read/write operations
Empty, full and half flags in single device mode
Retransmit capability
Bi-directional applications
Battery back-up operation : 2 V data retention
TTL compatible
Single 5 V
±
10 % power supply
High Performance SCMOS Technology
Rev. C – June 30, 1999
1

 
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