SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-214AB
(SMC J-Bend)
0.126 (3.20)
0.114 (2.90)
Stand-off Voltage
5.0 to 188V
Peak Pulse Power
1500W
Cathode Band
0.245 (6.22)
0.220 (5.59)
ded ge
ten Ran
Ex e
ltag
Vo
0.121 MIN.
(3.07 MIN.)
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.060 MIN.
(1.52 MIN.)
0.008
(0.203)
Max.
Dimensions in inches
and (millimeters)
0.320 REF
Mechanical Data
Case:
JEDEC DO-214AB molded plastic over
passivated junction
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:
For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight:
0.007oz., 0.21g
Flammability:
Epoxy is rated UL 94V-0
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
57 – 850 per 7” plastic Reel (16mm tape), 8.5K/carton
9A – 3.5K per 13” plastic Reel (16mm tape), 35K/carton
Features
• Underwriters Laboratory Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 1500W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Very fast response time
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
• Contact local sales office for gull-wing lead
(SMCG prefix) form (DO-215AB)
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Parameter
Peak pulse power dissipation with
a 10/1000µs waveform
(1)(2)
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
(2)
uni-directional only
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
P
PPM
I
PPM
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
Minimum 1500
See Next Table
200
75
15
–55 to +150
Unit
W
A
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88394
1-May-02
www.vishay.com
1
SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Modified
“J” Bend Lead
+SMCJ5.0
+SMCJ5.0A
(5)
+SMCJ6.0
+SMCJ6.0A
+SMCJ6.5
+SMCJ6.5A
+SMCJ7.0
+SMCJ7.0A
+SMCJ7.5
+SMCJ7.5A
+SMCJ8.0
+SMCJ8.0A
+SMCJ8.5
+SMCJ8.5A
+SMCJ9.0
+SMCJ9.0A
+SMCJ10
+SMCJ10A
+SMCJ11
+SMCJ11A
+SMCJ12
+SMCJ12A
+SMCJ13
+SMCJ13A
+SMCJ14
+SMCJ14A
+SMCJ15
+SMCJ15A
+SMCJ16
+SMCJ16A
+SMCJ17
+SMCJ17A
+SMCJ18
+SMCJ18A
+SMCJ20
+SMCJ20A
+SMCJ22
+SMCJ22A
+SMCJ24
+SMCJ24A
+SMCJ26
+SMCJ26A
+SMCJ28
+SMCJ28A
+SMCJ30
+SMCJ30A
Device
Marking
Code
UNI
BI
GDD
GDD
GDE
GDE
GDF
GDF
GDG
GDG
GDH
BDH
GDK
BDK
GDL
GDL
GDM
GDM
GDN
BDN
GDP
BDP
GDQ
BDG
GDR
BDR
GDS
BDS
GDT
BDT
GDU
BDU
GDV
BDV
GDW
BDW
GDX
BDX
GDY
GDY
GDZ
GDZ
GED
BED
GEE
BEE
GEF
GEF
GEG
GEG
GEH
BEH
GEK
BEK
GEL
BEL
GEM
BEM
GEN
GEN
GEP
GEP
GEQ
GEQ
GER
GER
GES
BES
GET
BET
GEU
BEU
GEV
BEV
GEW
BEW
GEX
BEX
GEY
BEY
GEZ
BEZ
GFD
BFD
GFE
BFE
GFF
BFF
GFG
BFG
GFH
BFH
GFK
BFK
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
6.40
7.82
6.40
7.07
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.2
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
Test
Current
I
T
(mA)
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
F
= 3.5V at I
F
= 100A (uni-directional only)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
1000
156.3
9.6
1000
163.0
9.2
1000
131.6
11.4
1000
145.6
10.3
500
122.0
12.3
500
133.9
11.2
200
112.8
13.3
200
125.0
12.0
100
104.9
14.3
100
116.3
12.9
50
100.0
15.0
50
110.3
13.6
20
94.3
15.9
20
104.2
14.4
10
88.8
16.9
10
97.4
15.4
5.0
79.8
18.8
5.0
88.2
17.0
5.0
74.6
20.1
5.0
82.4
18.2
5.0
68.2
22.0
5.0
75.4
19.9
1.0
63.0
23.8
1.0
69.8
21.5
1.0
58.1
25.8
1.0
64.7
23.2
1.0
55.8
26.9
1.0
61.5
24.4
1.0
52.1
28.8
1.0
57.7
26.0
1.0
49.2
30.5
1.0
54.3
27.6
1.0
46.6
32.2
1.0
51.4
29.2
1.0
41.9
35.8
1.0
46.3
32.4
1.0
38.1
39.4
1.0
42.3
35.5
1.0
34.9
43.0
1.0
38.6
38.9
1.0
32.2
46.6
1.0
35.6
42.1
1.0
30.0
50.0
1.0
33.0
45.4
1.0
28.0
53.5
1.0
31.0
48.4
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMCG/SMCJ5.0CA, the maximum V
(BR)
is 7.25V
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
www.vishay.com
2
Document Number 88394
1-May-02
SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Modified
“J” Bend Lead
+SMCJ33
+SMCJ33A
+SMCJ36
+SMCJ36A
+SMCJ40
+SMCJ40A
+SMCJ43
+SMCJ43A
+SMCJ45
+SMCJ45A
+SMCJ48
+SMCJ48A
+SMCJ51
+SMCJ51A
+SMCJ54
+SMCJ54A
+SMCJ58
+SMCJ58A
+SMCJ60
+SMCJ60A
+SMCJ64
+SMCJ64A
+SMCJ70
+SMCJ70A
+SMCJ75
+SMCJ75A
+SMCJ78
+SMCJ78A
+SMCJ85
+SMCJ85A
+SMCJ90
+SMCJ90A
+SMCJ100
+SMCJ100A
+SMCJ110
+SMCJ110A
+SMCJ120
+SMCJ120A
+SMCJ130
+SMCJ130A
+SMCJ150
+SMCJ150A
+SMCJ160
+SMCJ160A
+SMCJ170
+SMCJ170A
SMCJ188
SMCJ188A
Device
Marking
Code
UNI
BI
GFL
BFL
GFM
BFM
GFN
BFN
GFP
BFP
GFQ
BFQ
GFR
BFR
GFS
BFS
GFT
BFT
GFU
GFU
GFV
GFV
GFW
GFW
GFX
GFX
GFY
GFY
GFZ
GFZ
GGD
GGD
GGE
GGE
GGF
GGF
GGG
GGG
GGH
GGH
GGK
GGK
GGL
GGL
GGM
GGM
GGN
GGN
GGP
GGP
GGQ
GGQ
GGR
GGR
GGS
GGS
GGT
GGT
GGU
GGU
GGV
GGV
GGW GGW
GGX
GGX
GGY
GGY
GGZ
GGZ
GHD
GHD
GHE
GHE
GHF
GHF
GHG
GHG
GHH
GHH
GHK
GHK
GHL
GHL
GHM
GHM
GHN
GHN
GHP
GHP
GHQ
GHQ
GHR
GHR
GHT
GHT
GHS
GHS
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
47.8
58.4
47.8
52.8
50.0
61.1
50.0
55.3
53.3
65.1
53.3
58.9
56.7
69.3
56.7
62.7
60.0
73.3
60.0
66.3
64.4
78.7
64.4
71.2
66.7
81.5
66.7
73.7
71.1
86.9
71.1
78.6
77.8
95.1
77.8
86.0
83.3
102
83.3
92.1
86.7
106
86.7
95.8
94.4
115
94.4
104
100
122
100
111
111
136
111
123
122
149
122
135
133
163
133
147
144
176
144
159
167
204
167
185
178
218
178
197
189
231
189
209
209
255
209
231
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
F
= 3.5V at I
F
= 100A (uni-directional only)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
1.0
25.4
59.0
1.0
28.1
53.3
1.0
23.3
64.3
1.0
25.8
58.1
1.0
21.0
71.4
1.0
23.3
64.5
1.0
19.6
76.7
1.0
21.6
69.4
1.0
18.7
80.3
1.0
20.6
72.7
1.0
17.5
85.5
1.0
19.4
77.4
1.0
16.5
91.1
1.0
18.2
82.4
1.0
15.6
96.3
1.0
17.2
87.1
1.0
14.6
103
1.0
16.0
93
1.0
14.0
107
1.0
15.5
96
1.0
13.2
114
1.0
14.6
103
1.0
12.0
125
1.0
13.3
113
1.0
11.2
134
1.0
12.4
121
1.0
10.8
139
1.0
11.9
126
1.0
9.9
151
1.0
10.9
137
1.0
9.4
160
1.0
10.3
146
1.0
8.4
179
1.0
9.3
162
1.0
7.7
196
1.0
8.5
177
1.0
7.0
214
1.0
7.8
193
1.0
6.5
231
1.0
7.2
209
1.0
5.6
268
1.0
6.2
243
1.0
5.2
287
1.0
5.8
259
1.0
4.9
304
1.0
5.5
275
1.0
4.4
344
1.0
4.6
328
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
Document Number 88394
1-May-02
www.vishay.com
3
SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
Fig. 2 – Pulse Derating Curve
P
PPM
— Peak Pulse Power (kW)
75
10
50
1
0.31 x 0.31" (8.0 x 8.0mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
0
0
25
50
75
100
125
150
175
200
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
20,000
Fig. 4 – Typical Junction Capacitance
Uni-Directional
C
J
— Junction Capacitance (pF)
10,000
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
1,000
V
R
, Measured at
Stand-Off
Voltage, V
WM
100
Uni-Directional
Bi-Directional
10
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
100
400
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
1
10
t — Time (ms)
V
WM
— Reverse Stand-Off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
100
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
200
Transient Thermal Impedance (°C/W)
10
1.0
Peak Forward Surge Current,
Amperes
100
0.1
0.001
10
0.01
0.1
1
10
100
1000
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
J
= T
J
max.
1
10
100
t
p
— Pulse Duration (sec)
www.vishay.com
4
Number of Cycles at 60Hz
Document Number 88394
1-May-02
Microchip MCU
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