LAB
SOT-227 Package
1- Cathode 2
2- Anode 2
SEME
SML30EUZ12JD
Enhanced Ultrafast Recovery Diode
1200 Volt, 2 x 30 Amp
TECHNOLOGY
SML
3 0 E U Z 1 2 JD
The planar passivated and enhanced ultrafast recovery
diode features a triple charge control action utilising
Semelab’s Graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
3- Cathode 1
4- Anode 1
Parallel
1
2
BENEFITS
l
l
l
l
l
l
l
Very fast recovery for low switching losses
Ultra soft recovery with low EMI generation
High dynamic ruggedness under all conditions
Low temperature dependency
Low on-state losses with positive temperature coefficient
Stable blocking voltage and low leakage current
Avalanche rated for high reliability circuit operation
3
4
See package outline for mechanical data and more details
Key Parameters
APPLICATIONS
V
R
V
F
I
F
t
rr
(max)
(typ)
(max)
(max)
1200V
3.1V
2 x 30A
45ns
l
l
l
l
l
l
Freewheeling Diode for IGBTs and MOSFETs
Uninterruptible Power Supplies UPS
Switch Mode Power Supplies SMPS
Inverse and Clamping Diode
Snubber Diode
Fast Switching Rectification
ABSOLUTE MAXIMUM RATINGS*
(T
case
=
25°C unless otherwise stated)
V
RRM
V
R
I
FAV
I
FSM(surge)
I
FS(surge)
P
D
W
AVL
T
j
,T
STG
* per diode
Peak Repetitive Reverse Voltage
DC Reverse Blocking Voltage
Average Forward Current @Tc = 85°C
Repetitive Forward Current
Non-Repetitive Forward Current (10msec pulse)
Power Dissipation @Tc = 85°C
Avalanche Energy (L=40mH)
Operating & Storage Junction Temperature
1200V
1200V
30A
75A
300A
100W
30mJ
-55 to 150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim 8/00
LAB
ELECTRICAL & MECHANICAL CHARACTERISTICS*
Parameter
Test Conditions
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
2.35
1
0.75
TBD
0.96
35
55
1.56
47
66
45
750
5
µA
mA
pF
µC
A
nsec
µC
A
nsec
nsec
SEME
SML30EUZ12JD
Min.
Typ.
3.1
Max.
3.5
3.7
Unit
STATIC ELECTRICAL CHARACTERISTICS
I
F
= 30A
V
Forward Voltage Drop
I
F
= 30A
F
I
F
= 15A
I
R
C
T
Leakage Current
Junction Capacitance
V
R
= 1200V
V
R
= 1200V
V
R
= 200V
V
DYNAMIC ELECTRICAL CHARACTERISTICS
Q
rr
Reverse Recovery Charge
V
R
= 600V
I
F
= 30A
Reverse Recovery Current
I
rr
di /dt = 1000A/µs
T
j
= 25°C
Reverse Recovery Time
t
rr
Q
rr
I
rr
t
rr
t
rr
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Time
V
R
= 600V
I
F
= 30A
di /dt = 1000A/µs
T
j
= 125°C
V
R
= 50V
di /dt = 100A/µs
I
F
= 1A
T
j
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Junction to Case Thermal Resistance
R
θjc
R
θja
T
L
L
S
Torque
* per diode
SOT-227 Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
0.93
TBD
300
10
1.5
Junction to Ambient Thermal Resistance
Lead Temperature
Stray Inductance
Mounting Torque
°C/W
°C
nH
N.m
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
1.95 (.077)
2.14 (.084)
Anti-parallel
Anode 2
Cathode 1 Cathode 2
Parallel
Anode 2
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 1
Cathode 1
Anode 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim 8/00
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