H11B1/H11B2/H11B3
Photodarlington
Optocoupler
FEATURES
• CTR Minimum at
I
F
= 1.0 mA
H11B1, 500%
H11B2, 200%
H11B3, 100%
• Isolation Test Voltage, 5300 V
RMS
• Coupling Capacitance, 0.5 pF
• Underwriters Lab File #E52744
•
V
VDE Approval #0884 (Available with
Option 1)
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode 1
Cathode 2
NC 3
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
.300 (7.62)
typ.
DESCRIPTION
The H11B1/H11B2/H11B3 are industry standard
optocouplers, consisting of a Gallium Arsenide
infrared LED and a silicon phototdarlington.
These optocouplers are constructed with a high
voltage insulation, double molded packaging
process which offers 7.5 kV withstand test capa-
bility.
Maximum Ratings
Emitter
Reverse Voltage ........................................... 3.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25
°
C....................... 100 mW
Derate Linearly from 25
°
C ................. 1.33 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage, BV
CEO
25 V
Emitter-Collector Breakdown Voltage, BV
ECO
7.0 V
Collector-Base Breakdown Voltage, BV
CBO
.... 30 V
Collector-Current (Continuous)................. 100 mA
Power Dissipation at 25
°
C....................... 150 mW
Derate Linearly from 25
°
C ................... 2.0 mW/
°
C
Package
Isolation Test Voltage (between
emitter and detector, refer
to standard climate 23
°
C/50%RH,
DIN 50014)....................................... 5300 V
RMS
Creepage.................................................
≥
7.0 mm
Clearance ................................................
≥
7.0 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1.....................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C..............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................
≥
10
11
Ω
Total Package Dissipation at 25
°
C
(LED plus Detector) ............................. 260 mW
Derate Linearly from 25
°
C ................... 3.5 mW/
°
C
Storage Temperature .................. -55
°
C to +150
°
C
Operating Temperature ............. –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C .................. 10 sec.
Characteristics,
T
A
=25
°
C
Parameter
Emitter
Forward Voltage
H11B1, B2
H11B3
Reverse Current
Junction Capacitance
Detector
BV
CEO
BV
ECO
BV
CBO
—
30
7.0
30
—
100
nA
—
—
V
Sym. Min. Typ.
Max. Unit Condition
V
F
—
1.1
1.5
V
I
F
=10 mA
I
F
=50 mA
V
R
=3.0 V
V
F
=0 V, f=1.0 mHz
I
R
C
J
—
50
10
—
µ
A
pF
I
C
=1.0 mA,
I
F
=0 mA
I
E
=100
µ
A,
I
F
=0 mA
I
C
=100
µ
A,
I
F
=0 mA
V
CE
=10 V,
I
F
=0 mA
I
CEO
Package
V
CEsat
DC Current Transfer
Ratio
H11B1
H11B2
H11B3
Capacitance Input
to Output
Switching Times
—
CTR
—
—
1.0
—
—
%
I
C
=1.0 mA,
I
C
=1.0 mA
V
CE
=5.0 V,
I
F
=1.0 mA
500
200
100
C
IO
t
on
t
off
—
—
—
0.5
5.0
30
—
pF
µ
s
—
I
F
=5.0 mA
V
CE
=10 V
R
L
=100
Ω
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–79
March 1, 2000-10
Figure 1. Forward voltage versus forward current
1.4
Figure 5. Non-saturated and saturated HFE
versus base current
HFE - Forward Transfer Gain
10000
8000
6000
4000
2000
0
.01
Vce = 1 V
Ta = 25°C
Vce = 5 V
VF - Forward Voltage - V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
Ta = -55°C
Ta = 25°C
Ta = 85°C
1
10
IF - Forward Current - mA
100
.1
1
10
100
Ib - Base Current - µA
Figure 2. Normalized non-saturated and
saturated CTR
ce
versus LED current
4.0
Figure 6. Low to high propagation delay versus
collector load resistance and LED current
tpLH - Low/High Propagation
Delay - µs
80 Ta = 25°C, Vcc = 5V
Vth = 1.5 V
60
40
470Ω
20
100Ω
0
0
5
10
15
IF - LED Current - mA
20
1KΩ
NCTRce - Normalized CTRce
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
.1
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 1 mA
Vce = 5 V
220Ω
Vce = 1 V
1
10
IF - LED Current - mA
100
Figure 3. Normalized non-saturated and
saturated Ice versus LED current
100
NIce - Normalized Ice
10
1
.1
.01
.1
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 2 mA
Vce = 5 V
Figure 7. High to low propagation delay versus
collector load resistance and LED current
tpHL - High/Low Propagation
delay - µs
20
1KΩ
15
10
5
0
0
5
10
15
IF - LED Current - mA
20
100Ω
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
Vce = 1 V
1
10
IF - LED Current - mA
100
Figure 4. Normalized non-saturated and saturated
collector-emitter current versus LED current
10
Normalized to:
Ta = 25°C
IF = 10 mA
Vce = 5 V
Vce = 5 V
Figure 8. Switching waveform and schematic
I
F
F=10 KHz,
DF=50%
V
CC
=10 V
R
L
V
O
NIce - Normalized Ice
1
.1
.01
.001
.1
Vce = 1V
V
O
t
D
t
R
t
PLH
V
TH
=1.5 V
t
F
IF=5 mA
1
10
IF - LED Current - mA
100
t
PHL
t
S
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–80
H11B1/2/3
March 1, 2000-10
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