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SA110C-E3/54

产品描述Trans Voltage Suppressor Diode, 110V V(RWM), Bidirectional,
产品类别分立半导体    二极管   
文件大小103KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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SA110C-E3/54概述

Trans Voltage Suppressor Diode, 110V V(RWM), Bidirectional,

SA110C-E3/54规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
Reach Compliance Codeunknown
ECCN代码EAR99
击穿电压标称值135.5 V
最大钳位电压196 V
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码e3
极性BIDIRECTIONAL
最大重复峰值反向电压110 V
表面贴装NO
端子面层Matte Tin (Sn)

文档预览

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SA5.0 thru SA170CA
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 170 V
500 W
3.0 W
70 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C or CA suffix
(e.g. SA5.0C, SA170CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
A
= 75 °C (Fig. 5)
Peak forward surge current, 10 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 35 A for uni-directional only
Operating junction and storage temperature range
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
500
See next table
3.0
70
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
Document Number: 88378
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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