8050 (1.5A)
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into two groups, C and
D, according to its DC current gain. As
complementary type the PNP transistor ST 8550 is
recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
o
C)
Symbol
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
S
Value
25
40
6
1
1.5
100
1
150
-55 to +150
Unit
V
V
V
A
A
mA
W
O
O
C
C
8050 (1.5A)
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at V
CE
=1V, I
C
=5mA
at V
CE
=1V, I
C
=100mA
at V
CE
=1V, I
C
=800mA
Collector Cutoff Current
at V
CB
=35V
Emitter Cutoff Current
at V
BE
=6V
Collector Saturation Voltage
at I
C
=800mA, I
B
=80mA
Base Saturation Voltage
at I
C
=800mA, I
B
=80mA
Collector Emitter Breakdown Voltage
at I
C
=2mA
Collector Base Breakdown Voltage
at I
C
=100µA
Emitter Base Breakdown Voltage
at I
E
=100µA
Base Emitter Voltage
at I
C
=10mA, V
CE
=1V
Gain Bandwidth Product
at V
CE
=10V, I
C
=50mA
Collector Base Capacitance
at V
CB
=10V, f=1MHz
C
OB
-
15
-
pF
f
T
120
200
-
MHz
V
BE
-
0.66
1
V
V
(BR)EBO
6
-
-
V
V
(BR)CBO
40
-
-
V
V
(BR)CEO
25
-
-
V
V
BE(sat)
-
0.98
1.2
V
V
CE(sat)
-
0.28
0.5
V
I
EBO
-
-
100
nA
8050C
8050D
h
FE
h
FE
h
FE
h
FE
I
CBO
45
120
160
40
-
170
-
-
80
-
-
200
300
-
100
nA
-
-
Min.
Typ.
Max.
Unit
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