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8550SG-D-AE3-R

产品描述Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3
产品类别分立半导体    晶体管   
文件大小183KB,共4页
制造商UNISONIC TECHNOLOGIES CO.,LTD
官网地址http://www.unisonic.com.tw/
标准
下载文档 详细参数 选型对比 全文预览

8550SG-D-AE3-R概述

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3

8550SG-D-AE3-R规格参数

参数名称属性值
是否Rohs认证符合
厂商名称UNISONIC TECHNOLOGIES CO.,LTD
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)0.7 A
集电极-发射极最大电压20 V
配置SINGLE
最小直流电流增益 (hFE)160
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

8550SG-D-AE3-R文档预览

UNISONIC TECHNOLOGIES CO., LTD
8550S
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
PNP TRANSISTOR
DESCRIPTION
The UTC
8550S
is a low voltage high current small signal
PNP transistor, designed for Class B push-pull audio amplifier
and general purpose applications.
PNP SILICON TRANSISTOR
3
1
2
SOT-23
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
1
TO-92
ORDERING INFORMATION
Normal
8550S-x-AE3-R
8550S-x-T92-B
8550S-x-T92-K
Ordering Number
Lead Free
8550SL-x-AE3-R
8550SL-x-T92-B
8550SL-x-T92-K
Halogen-Free
8550SG-x-AE3-R
8550SG-x-T92-B
8550SG-x-T92-K
Package
SOT-23
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
MARKING
(For SOT-23 Package)
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-002,E
8550S
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation(Ta=25°C)
SOT-23
TO-92
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
PNP SILICON TRANSISTOR
RATING
-30
-20
-5
-700
UNITS
V
V
V
mA
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C, unless otherwise specified )
350
mW
1
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
BE(SAT)
V
BE
f
T
Cob
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-150 mA
V
CE
=-1V, I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-30
-20
-5
TYP
MAX UNIT
V
V
V
-1
μA
-100
nA
400
-0.5
-1.2
-1.0
100
9.0
V
V
V
MHz
pF
100
120
40
CLASSIFICATION OF h
FE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-002,E
8550S
Current Gain-Bandwidth Product, fT(MHz)
Collector Current, Ic (mA)
Collector Current, Ic (mA)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Saturation Voltage (mV)
DC Current Gain, hFE
www.unisonic.com.tw
Capacitance, Cob (pF)
PNP SILICON TRANSISTOR
3 of 4
QW-R206-002,E
8550S
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-002,E

8550SG-D-AE3-R相似产品对比

8550SG-D-AE3-R 8550SG-E-T92-B 8550SG-E-AE3-R 8550SG-C-AE3-R 8550SG-C-T92-B 8550SG-D-T92-B 8550SG-C-T92-K 8550SG-E-T92-K 8550SG-D-T92-K
描述 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE PACKAGE-3 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE PACKAGE-3
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
包装说明 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
针数 3 3 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A
集电极-发射极最大电压 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 160 280 280 120 120 160 120 280 160
JESD-30 代码 R-PDSO-G3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
元件数量 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR ROUND RECTANGULAR RECTANGULAR ROUND ROUND ROUND ROUND ROUND
封装形式 SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES NO YES YES NO NO NO NO NO
端子形式 GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL BOTTOM DUAL DUAL BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
零件包装代码 - TO-92 - - TO-92 TO-92 TO-92 TO-92 TO-92
JEDEC-95代码 - TO-92 - - TO-92 TO-92 TO-92 TO-92 TO-92
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