电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

8050SL-D-AE3-R

产品描述Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3
产品类别分立半导体    晶体管   
文件大小207KB,共4页
制造商UNISONIC TECHNOLOGIES CO.,LTD
官网地址http://www.unisonic.com.tw/
标准
下载文档 详细参数 全文预览

8050SL-D-AE3-R概述

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3

8050SL-D-AE3-R规格参数

参数名称属性值
是否Rohs认证符合
厂商名称UNISONIC TECHNOLOGIES CO.,LTD
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)0.7 A
集电极-发射极最大电压20 V
配置SINGLE
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)0.35 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

8050SL-D-AE3-R文档预览

UNISONIC TECHNOLOGIES CO., LTD
8050S
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
The UTC
8050S
is a low voltage high current small signal NPN
transistor, designed for Class B push-pull audio amplifier and
general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20V
*Complementary to UTC
8550S
ORDERING INFORMATION
Ordering Number
Lead Free
8050SL-x-AE3-R
8050SL-x-T92-B
8050SL-x-T92-K
Halogen-Free
8050SG-x-AE3-R
8050SG-x-T92-B
8050SG-x-T92-K
Package
SOT-23
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
SOT-23
MARKING
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-001.H
8050S
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( T
A
=25°C, unless otherwise specified )
RATINGS
UNIT
30
V
20
V
5
V
700
mA
SOT-23
350
mW
Collector Dissipation(T
A
=25°C)
P
C
TO-92
1
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
f
T
Cob
TEST CONDITIONS
I
C
= 100μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100μA, I
C
=0
V
CB
= 30V,I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 150 mA
V
CE
= 1V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
MIN
30
20
5
TYP
MAX UNIT
V
V
V
1
uA
100
nA
400
0.5
1.2
1.0
100
9.0
V
V
V
MHz
pF
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
100
120
40
CLASSIFICATION OF h
FE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-001.H
8050S
Current Gain-Bandwidth
Product, f(MHz)
Collector Current, Ic(mA)
Collector Current, Ic(mA)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Saturation Voltage (mV)
DC Current Gain, h
FE
www.unisonic.com.tw
Capacitance, Cob (pF)
NPN SILICON TRANSISTOR
QW-R206-001.H
3 of 4
8050S
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-001.H
我现在编程序的能力很弱
把IIC 时钟 红外 键盘 LCD显示编写放在一起的程序我就搞不定了,,杂整??有没有谁有好办法??/...
硬制合金 单片机
云战争来了,速来领取云盘永久使用权:百度云+360yun
http://yun.baidu.com/1t http://huodong.yunpan.360.cn/na360g 截止时间不详,速去领取吧 :victory::victory:...
wgsxsm 聊聊、笑笑、闹闹
如何用J2ME程序编写一段程序将一些图片文件传到服务器的数据库中?
各位高手,如何用J2ME程序编写一段程序将一些图片文件传到服务器的数据库中?数据库是MYSQL,用jsp或是servlet将从客户端(J2ME程序)得到的图片数据插入到数据库中。...
pptyok 嵌入式系统
【NXP Rapid IoT评测】W1 初上手印象
在经历了各种延迟后,终于在18年的最后一个工作日收到了心仪的NXP Rapid IoT。按照计划,第一周是对整个设备的硬件做一个初步把玩评测,并不着急使用各种软件资源。 拿到设备的第一印象是, ......
johnrey 无线连接
该走硬件还是软件
本人大四,光学专业,但着迷电子方向,现在摆在我面前两条路:硬件,软件。我已经茫然了,走前者的话,我还要继续学ARM,DSP,FPGA,搞模拟数字电路,甚至光学设计;走后者的话,又要去学uCOS ......
gaosu0906 工作这点儿事
LTC1645/LTC1735电路解决PCI电源问题
在某些应用中,必须选择和热交换两个电源较高电压的电源,并从所选电源产生稳压输出。假若只有一个输入电源,则电路将选择该电源并产生相同的输出电压。“热交换(hotswapping)”意指从带电底 ......
yang537 电源技术

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2789  369  2294  774  503  19  39  17  24  44 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved