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CYT5551HCDBKLEADFREE: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小540KB，共2页; 制造商Central Semiconductor; 标准

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CYT5551HCDBKLEADFREE概述

Transistor

CYT5551HCDBKLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	,
Reach Compliance Code	compliant
最大集电极电流 (IC)	1 A
最小直流电流增益 (hFE)	80
最高工作温度	150 °C
极性/信道类型	NPN
最大功率耗散 (Abs)	2 W
表面贴装	YES
标称过渡频率 (fT)	100 MHz

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CYT5551HCD

SURFACE MOUNT

DUAL, ISOLATED

HIGH CURRENT

NPN SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CYT5551HCD

type consists of two (2) isolated NPN high current

silicon transistors packaged in an epoxy molded

SOT-228 surface mount case. Manufactured by the

epitaxial planar process, this SUPERmini™ device is

ideal for high current applications.

MARKING: FULL PART NUMBER

SOT-228 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

180

160

6.0

1.0

2.0

-65 to +150

62.5

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

ICBO

VCB=120V

ICBO

VCB=120V, TA=100ºC

IEBO

VBE=4.0V

BVCBO

IC=100µA

180

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

IC=1.0mA

IE=10µA

IC=10mA,

IC=50mA,

IB=1.0mA

IB=5.0mA

160

6.0

0.15

0.20

1.00

100

250

UNITS

µA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=50mA

VCE=10V, IC=1.0A

VCE=10V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

MHz

R2 (23-February 2010)

CYT5551HCDBKLEADFREE相似产品对比

	CYT5551HCDBKLEADFREE	CYT5551HCDTRLEADFREE	CYT5551HCDLEADFREE
描述	Transistor	Transistor	Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8
是否Rohs认证	符合	符合	符合
Reach Compliance Code	compliant	compliant	compliant
最大集电极电流 (IC)	1 A	1 A	1 A
最小直流电流增益 (hFE)	80	80	80
极性/信道类型	NPN	NPN	NPN
表面贴装	YES	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz
最高工作温度	150 °C	150 °C	-
最大功率耗散 (Abs)	2 W	2 W	-
Base Number Matches	-	1	1

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