MCP6441/2/4
450 nA, 9 kHz Op Amp
Features:
•
•
•
•
•
•
•
•
•
Low Quiescent Current: 450 nA (typical)
Gain Bandwidth Product: 9 kHz (typical)
Supply Voltage Range: 1.4V to 6.0V
Rail-to-Rail Input and Output
Unity Gain Stable
Slew Rate: 3V/ms (typical)
Extended Temperature Range: -40°C to +125°C
No Phase Reversal
Small Packages
Description:
The MCP6441/2/4 device is a single nanopower
operational amplifier (op amp), which has low
quiescent current (450 nA, typical) and rail-to-rail input
and output operation. This op amp is unity gain stable
and has a gain bandwidth product of 9 kHz (typical).
These devices operate with a single supply voltage as
low as 1.4V. These features make the family of op
amps well suited for single-supply, battery-powered
applications.
The MCP6441/2/4 op amp is designed with Microchip’s
advanced CMOS process and offered in single
(MCP6441), dual (MCP6442), and quad (MCP6444)
configurations. All devices are available in the
extended temperature range, with a power supply
range of 1.4V to 6.0V.
Applications:
•
•
•
•
•
•
Portable Equipment
Battery Powered System
Data Acquisition Equipment
Sensor Conditioning
Battery Current Sensing
Analog Active Filters
Typical Application
IDD
1.4V
to
6.0V
10
Ω
100 k
Ω
VDD
To load
Design Aids:
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
MCP6441
1 M
Ω
VOUT
VDD
–
VOUT
I DD = -----------------------------------------
-
(
10 V/V
)
⋅
(
10
Ω
)
Battery Current Sensing
Package Types
MCP6441
SC70-5, SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
5 V
DD
4 V
IN
–
MCP6442
SOIC, MSOP
V
OUTA
1
V
INA
– 2
V
IN
+ 3
V
SS
4
8
7
6
5
V
DD
V
OUTB
V
IN
–
V
INB
+
MCP6444
SOIC, TSSOP
V
OUTA
V
INA
–
V
IN
+
V
DD
V
INB
+
V
INB
–
V
OUTB
1
2
3
4
5
6
7
14
V
OUTD
13
V
IND
–
12
V
IND+
11
V
SS
10
V
INC
+
9
V
INC
–
8
V
OUTC
©
2011 Microchip Technology Inc.
DS22257B-page 1
MCP6441/2/4
NOTES:
DS22257B-page 2
©
2011 Microchip Technology Inc.
MCP6441/2/4
1.0
1.1
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2 “Input Voltage Limits”.
V
DD
– V
SS
........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (V
IN
+
, V
IN
-
)†† .......... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +150°C
ESD Protection on All Pins (HBM; MM)
............... ≥
4 kV; 200V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +6.0V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2 and R
L
= 1 MΩ to V
L
. (Refer to
Figure 1-1).
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
I
B
—
—
—
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
1.4
250
—
450
6.0
650
V
nA
I
O
= 0, V
DD
= 5.0V
V
OL,
V
OH
I
SC
V
SS
+20
—
—
—
±3
±22
V
DD
–20
—
—
mV
mA
mA
V
DD
= 6.0V, R
L
= 10 kΩ
0.5V input overdrive
V
DD
= 1.4V
V
DD
= 6.0V
A
OL
90
110
—
dB
V
OUT
= 0.1V to V
DD
-0.1V
R
L
= 10 kΩ to V
L
V
CMR
CMRR
V
SS
-0.3
60
—
76
V
DD
+0.3
—
V
dB
V
CM
= -0.3V to 6.3V,
V
DD
= 6.0V
I
OS
Z
CM
Z
DIFF
—
—
—
±1
20
400
±1
10
13
||6
10
13
||6
—
—
—
—
—
—
pA
pA
pA
pA
Ω||pF
Ω||pF
T
A
= +85°C
T
A
= +125°C
V
OS
ΔV
OS
/ΔT
A
PSRR
-4.5
—
65
—
±2.5
86
+4.5
—
—
mV
V
CM
= V
SS
µV/°C T
A
= -40°C to +125°C,
V
CM
= V
SS
dB
V
CM
= V
SS
Sym
Min
Typ
Max
Units
Conditions
©
2011 Microchip Technology Inc.
DS22257B-page 3
MCP6441/2/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.4V to +6.0V, V
SS
= GND,
V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 MΩ to V
L
and C
L
= 60 pF. (Refer to
Figure 1-1).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
5
190
0.6
—
—
—
µVp-p
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
9
65
3
—
—
—
kHz
°
V/ms
G = +1 V/V
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +6.0V and V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
331
220.7
149.5
20
95.3
100
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
-40
-65
—
—
+125
+150
°C
°C
Note 1
Sym
Min
Typ
Max
Units
Conditions
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
C
F
6.8 pF
R
G
100 kΩ
V
P
V
IN+
MCP6441
V
IN–
V
M
R
G
100 kΩ
R
F
100 kΩ
C
F
6.8 pF
V
OUT
R
L
1 MΩ
C
L
60 pF
C
B1
100 nF
R
F
100 kΩ
V
DD
V
DD
/2
1.2
Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-1.
This circuit can independently set V
CM
and
V
OUT
(see
Equation 1-1).
Note that V
CM
is not the
circuit’s Common Mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of the temperature, CMRR, PSRR and
A
OL
.
EQUATION 1-1:
G
DM
= R
F
⁄
R
G
V
CM
=
(
V
P
+ V
DD
⁄
2
)
⁄
2
C
B2
1 µF
V
OUT
=
(
V
DD
⁄
2
)
+
(
V
P
–
V
M
)
+ V
OST
(
1 + G
DM
)
Where:
G
DM
= Differential Mode Gain
V
CM
= Op Amp’s Common Mode
Input Voltage
V
OST
= Op Amp’s Total Input Offset
Voltage
(V/V)
(V)
(mV)
V
OST
= V
IN–
–
V
IN+
V
L
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
DS22257B-page 4
©
2011 Microchip Technology Inc.
MCP6441/2/4
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.4V to +6.0V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
V
L
= V
DD
/2, R
L
= 1 MΩ to V
L
and C
L
= 60 pF.
35%
Percentage of Occurences
30%
25%
20%
15%
10%
5%
0%
-3.5
-0.5
-4.5
-2.5
-1.5
3.5
1.5
2.5
4.5
0.5
Input Offset Voltage (mV)
1700 Samples
V
CM
= V
SS
4000
Input Offset Voltage (µV)
3500
3000
2500
2000
1500
1000
500
0
-500
1.3
1.5
5.5
6.0
-0.3
-0.1
Common mode input voltage (V)
1.7
6.5
6.0
0.1
0.3
0.5
0.7
0.9
1.1
4.0
5.0
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
V
DD
= 1.4V
Representative Part
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 1.4V.
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
0.0
0.5
1.0
1.5
30%
Percentage of Occurences
25%
20%
15%
10%
5%
0%
-2
-8
-6
-4
0
2
4
6
-10
8
10
Input Offset Voltage Drift (µV/°C)
Input Offset Voltage (µV)
1700 Samples
V
CM
= V
SS
T
A
= -40°C to +125°C
V
DD
= 1.4V
V
DD
= 6.0V
Representative Part
Output Voltage (V)
FIGURE 2-2:
Input Offset Voltage Drift.
FIGURE 2-5:
Output Voltage.
2000
1600
1200
800
400
0
-400
-800
-1200
-1600
-2000
1.0
1.5
Input Offset Voltage vs.
3000
Input Offset Voltage (µV)
2500
2000
1500
1000
500
0
-500
5.5
-0.5
6.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
Common Mode Input Voltage (V)
Input Offset Voltage (µV)
V
DD
= 6.0V
Representative Part
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
T
A
=
T
A
=
T
A
=
T
A
=
+125°C
+85°C
+25°C
-40°C
Representative Part
2.0
2.5
3.0
3.5
4.0
4.5
Power Supply Voltage (V)
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 6.0V.
FIGURE 2-6:
Input Offset Voltage vs.
Power Supply Voltage.
©
2011 Microchip Technology Inc.
DS22257B-page 5
5.5
5.0
2.0
2.5
3.0
3.5
4.5
传感器
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