BMS3003
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=--78A, VGS=0V
See Fig.3
IS=--78A, VGS=0V, di/dt=--100A/μs
VDS=--36V, VGS=--10V, ID=--78A
See Fig.2
VDS=--20V, f=1MHz
Conditions
-1mA,
VGS=0V
ID=-
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
-10V,
ID=-
-1mA
VDS=-
-10V,
ID=--39A
VDS=-
-10V
ID=--39A, VGS=-
-4V
ID=--39A, VGS=-
Ratings
min
--60
-
-10
±10
--1.2
130
5.0
6.5
13200
1300
950
90
360
1200
680
285
35
70
-
-0.95
150
470
-
-1.5
6.5
9.0
--2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
VIN
VDD= --36V
D
≥50Ω
RG
G
L
0V
--10V
VIN
BMS3003
PW=10μs
D.C.≤1%
G
D
ID= --39A
RL=0.92Ω
VOUT
0V
--10V
50Ω
S
VDD
P.G
BMS3003
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
D
L
BMS3003
G
S
VDD
Driver MOSFET
No. A1907-2/5
BMS3003
Note on usage : Since the BMS3003 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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to change without notice.
PS No. A1907-5/5
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