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SM6T33CA-HE3/5B

产品描述DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor
产品类别分立半导体    二极管   
文件大小98KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 详细参数 全文预览

SM6T33CA-HE3/5B概述

DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

SM6T33CA-HE3/5B规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码DO-214AA
包装说明ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
针数2
Reach Compliance Codeunknown

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SM6T Series
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• 600 W peak pulse power capability with a
10/1000 µs waveform
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
V
BR
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
6.8 V to 220 V
600 W
5.0 W
100 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
SM6T12CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation on 10/1000 µs waveform
(1)(2)
(Fig. 1)
Peak power pulse current with a 10/1000 µs waveform
(1)
(Fig. 3)
Power dissipation on infinite heatsink T
A
= 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
, T
STG
VALUE
600
See next table
5.0
100
- 65 to +150
UNIT
W
A
W
A
°C
Document Number: 88385
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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