GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
SFH 495 P
SFH 4552
SFH 495 P
SFH 4552
Wesentliche Merkmale
• Stimulierter Emitter mit sehr hohem
Wirkungsgrad
• Laserdiode in diffusem Gehäuse
• Besonders geeignet für Impulsbetrieb bei
hohen Strömen
• Hohe Zuverlässigkeit
• Gegurtet lieferbar
Anwendungen
• Datenübertragung
• Fernsteuerungen
• „Messen, Steuern, Regeln“
Typ
Type
SFH 495 P
Bestellnummer
Ordering Code
Q62703-Q2891
Gehäuse
Package
Features
•
•
•
•
•
Stimulated emitter with high efficiency
Laser diode in diffuse package
Suitable esp. for pulse operation at high current
High reliability
Available on tape and reel
Applications
• Data transfer
• Remote controls
• For drive and control circuits
5-mm-LED-Gehäuse (T 1
3
/
4
), plan, schwarz eingefärbt,
2.54-mm-Raster,
Kathodenkennzeichnung: kürzerer Anschluß
5 mm LED package (T 1
3
/
4
), flat, black colored,
spacing 2.54 mm, cathode marking: short lead.
5-mm-LED-Gehäuse (T 1
3
/
4
), weiß diffus eingefärbt,
2.54-mm-Raster,
Kathodenkennzeichnung: kürzerer Anschluß
5 mm LED package (T 1
3
/
4
), white diffuse colored,
spacing 2.54 mm, cathode marking: short lead.
SFH 4552
Q62702-P5054
2001-04-19
1
SFH 495 P, SFH 4552
Grenzwerte
(
T
A
= 25
°C)
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Stoßstrom,
t
p
= 200
µs,
D
= 0
Surge current
Verlustleistung
Power dissipation
Wärmewiderstand
Thermal resistance
Kennwerte
(
T
A
= 25
°C)
Characteristics
Bezeichnung
Parameter
Wellenlänge der Strahlung
Wavelength at peak emission
I
F
= 200 mA,
t
p
= 20 ms
Spektrale Bandbreite bei 50% von
I
max
Spectral bandwidth at 50% of
I
max
I
F
= 200 mA
Abstrahlwinkel
Half angle
SFH 495 P
SFH 4552
Symbol
Symbol
λ
peak
Wert
Value
940
Einheit
Unit
nm
Symbol
Symbol
Wert
Value
– 40 … + 85
0 … + 85
1
1
160
350
Einheit
Unit
°C
V
A
mW
K/W
T
stg
T
op
V
R
I
FSM
P
tot
R
thJA
∆λ
4
nm
ϕ
±
30
±
50
1
Grad
deg.
Schaltzeiten,
I
e
von 10% auf 90% und von 90% auf
t
r
,
t
f
10%, bei
I
F
= 200 mA,
R
L
= 50
Ω
Switching times,
I
e
from 10% to 90% and from
90% to 10%,
I
F
= 200 mA,
R
L
= 50
Ω
Kapazität
Capacitance
V
R
= 0 V,
f
= 1 MHz
Durchlaßspannung
Forward voltage
I
F
= 1 A,
t
p
= 100
µs
ns
C
o
90
pF
V
F
2.1
V
2001-04-19
2
SFH 495 P, SFH 4552
Kennwerte
(
T
A
= 25
°C)
Characteristics
(cont’d)
Bezeichnung
Parameter
Schwellenstrom
1)
Threshold current
1)
Gesamtstrahlungsfluß
Total radiant flux
I
F
= 1 A,
t
p
= 10
µs
Strahlstärke
Radiant intensity
I
F
= 1 A,
t
p
= 10
µs
SFH 495 P
SFH 4552
1)
Symbol
Symbol
Wert
Value
< 150
700
Einheit
Unit
mA
mW
I
th
Φ
e
I
e
mW/sr
400
200
Remark:
This IRED works efficiently at forward currents higher than
I
th
.
Warning:
This data sheet refers to high power infrared emitting semiconductors.
Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit
luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1.
When operating powerful emitters, care should be taken to comply with IEC 825.1 to minimize
any possible eye hazard:
– Use lowest possible drive level
– Use diffusing optics where possible
– Avoid staring into powerful emitters or connected fibers
2001-04-19
3
SFH 495 P, SFH 4552
Radiant Intensity
I
e
=
f
(
I
F
)
Ι
e
160
%
140
120
1.4
OHF00328
Forward Current
I
F
=
f
(
V
F
)
Ι
F
2.0
A
1.8
1.6
OHF00329
100
80
60
40
1.2
1.0
0.8
0.6
0.4
20
0
0.2
0
0.4
0.8
1.2
1.6 A 2.0
Ι
F
0
1.4
1.6
1.8
2.0
2.2 V 2.4
V
F
Radiation Characteristics
SFH 495 P
I
rel
=
f
(ϕ)
40
30
20
10
0
1.0
OHF00330
ϕ
50
0.8
60
0.6
70
0.4
80
90
0.2
0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Radiation Characteristics
SFH 4552
I
rel
=
f
(ϕ)
40
30
20
ϕ
10
0
1.0
OHF00441
50
0.8
60
0.6
70
0.4
80
90
0.2
0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-04-19
4
SFH 495 P, SFH 4552
Maßzeichnung
Package Outlines
SFH 495 P
29.0 (1.142)
27.0 (1.063)
5.0 (0.197)
4.2 (0.165)
0.6 (0.024)
0.4 (0.016)
0.8 (0.031)
0.4 (0.016)
ø5.1 (0.201)
ø4.8 (0.189)
2.54 (0.100)
spacing
5.9 (0.232)
5.5 (0.217)
1.8 (0.071)
1.2 (0.047)
Anode
3.85 (0.152)
3.35 (0.132)
Area not flat
Chip position
GEXY6971
0.6 (0.024)
0.4 (0.016)
SFH 4552
Area not flat
6.9 (0.272)
ø5.1 (0.201)
0.8 (0.031)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
6.1 (0.240)
5.7 (0.224)
5.5 (0.217)
ø4.8 (0.189)
2.54 (0.100)
spacing
5.9 (0.232)
5.5 (0.217)
1.8 (0.071)
1.2 (0.047)
29.5 (1.161)
27.5 (1.083)
Cathode
4.0 (0.157)
3.4 (0.134)
0.6 (0.024)
0.4 (0.016)
Chip position
GEXY6632
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2001-04-19
5
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