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HY6264ALJ-85

产品描述Standard SRAM, 8KX8, 85ns, CMOS, PDSO28, 0.330 INCH, SOP-28
产品类别存储    存储   
文件大小129KB,共9页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
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HY6264ALJ-85概述

Standard SRAM, 8KX8, 85ns, CMOS, PDSO28, 0.330 INCH, SOP-28

HY6264ALJ-85规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称SK Hynix(海力士)
零件包装代码SOIC
包装说明SOP, SOP28,.5
针数28
Reach Compliance Codecompliant
ECCN代码EAR99
最长访问时间85 ns
其他特性BATTERY BACKUP
I/O 类型COMMON
JESD-30 代码R-PDSO-G28
JESD-609代码e0
长度18.39 mm
内存密度65536 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端口数量1
端子数量28
字数8192 words
字数代码8000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8KX8
输出特性3-STATE
可输出YES
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP28,.5
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
认证状态Not Qualified
座面最大高度2.794 mm
最大待机电流0.00005 A
最小待机电流2 V
最大压摆率0.05 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度8.69 mm

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HY6264A Series
8Kx8bit CMOS SRAM
DESCRIPTION
The HY6264A is a high-speed, low power and
8,192x8-bits CMOS static RAM fabricated using
Hyundai's high performance twin tub CMOS
process technology. This high reliability process
coupled with innovative circuit design techniques,
yields maximum access time of 70ns. The
HY6264A has a data retention mode that
guarantees data to remain valid at the minimum
power supply voltage of 2.0 volt. Using the CMOS
technology, supply voltage from 2.0 to 5.5 volt
has little effect on supply current in the data
retention mode. Reducing the supply voltage to
minimize current drain is unnecessary for the
HY6264A Series.
FEATURES
Fully static operation and Tri-state outputs
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
-2.0V(min.) data retention
Standard pin configuration
-28 pin 600 mil PDIP
-28 pin 330 mil SOP
Product
Voltage
Speed
No.
(V)
(ns)
HY6264A
5.0
70/85/100
Note 1. Current value is max.
Operation
Current(mA)
50
Standby Current(uA)
L
LL
1mA
100
10
Temperature
(°C)
0~70(Normal)
PIN CONNECTION
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
CS2
A8
A9
A11
/OE
A10
/CS1
I/O8
I/O7
I/O6
I/O5
I/O4
BLOCK DIAGRAM
A0
SENSE AMP
ROW DECODER
ADD INPUT BUFFER
I/O1
OUTPUT BUFFER
I/O8
CS2
PDIP
SOP
/OE
/WE
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/OE
A0-A12
Pin Function
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Address Inputs
Pin Name
I/O1-I/O8
Vcc
Vss
NC
Pin Function
Data Input/Output
Power(+5V)
Ground
No Connect
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Jan.99
Hyundai Semiconductor
CONTROL
LOGIC
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
CS2
A8
A9
A11
/OE
A10
/CS1
I/O8
I/O7
I/O6
I/O5
I/O4
COLUMN DECODER
A12
/CS1
WRITE DRIVER
MEMORY ARRAY
128x512

 
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