CMXT2207
SURFACE MOUNT
DUAL COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2207 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose and switching
applications.
MARKING CODE: X07
SOT-26 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
NPN
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
75
40
6.0
600
350
-65 to +150
357
PNP
60
60
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise
NPN
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=60V
-
10
ICBO
VCB=50V
-
-
ICBO
VCB=60V, TA=125°C
-
10
ICBO
VCB=50V, TA=125°C
-
-
IEBO
VEB=3.0V
-
10
ICEV
VCE=60V, VEB=3.0V
-
10
ICEV
VCE=30V, VBE=0.5V
-
-
BVCBO
IC=10μA
75
-
BVCEO
IC=10mA
40
-
BVEBO
IE=10μA
6.0
-
VCE(SAT)
IC=150mA, IB=15mA
-
0.3
VCE(SAT)
IC=500mA, IB=50mA
-
1.0
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
VBE(SAT)
IC=500mA, IB=50mA
-
2.0
hFE
VCE=10V, IC=0.1mA
35
-
hFE
VCE=10V, IC=1.0mA
50
-
hFE
VCE=10V, IC=10mA
75
-
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=1.0V, IC=150mA
50
-
hFE
VCE=10V, IC=500mA
40
-
fT
VCE=20V, IC=20mA, f=100MHz
300
-
fT
VCE=20V, IC=50mA, f=100MHz
-
-
noted)
PNP
MIN
MAX
-
-
-
10
-
-
-
10
-
-
-
-
-
50
60
-
60
-
5.0
-
-
0.4
-
1.6
-
1.3
-
2.6
75
-
100
-
100
-
100
300
-
-
50
-
-
-
200
-
UNITS
nA
nA
μA
μA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
R3 (12-February 2010)
CMXT2207
SURFACE MOUNT
DUAL COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
(TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN MAX
UNITS
Cob
VCB=10V, IE=0, f=1.0MHz
-
8.0
-
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
-
25
-
-
pF
Cib
VEB=2.0V, IC=0, f=1.0MHz
-
-
-
30
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
-
-
kΩ
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
-
-
kΩ
hre
VCE=10V, IC=1.0mA, f=1.0kHz
-
8.0
-
-
x10-4
hre
VCE=10V, IC=10mA, f=1.0kHz
-
4.0
-
-
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
-
-
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
-
-
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
-
-
μS
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
-
-
μS
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
-
150
-
-
ps
NF
VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz
-
4.0
-
-
dB
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
-
-
45
ns
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
10
-
10
ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
25
-
40
ns
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
100
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
-
225
-
-
ns
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
80
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
-
60
-
-
ns
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
30
ns
SOT-26 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: X07
R3 (12-February 2010)
w w w. c e n t r a l s e m i . c o m
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