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CMXDM7002A_10

产品描述SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
文件大小500KB,共3页
制造商Central Semiconductor
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CMXDM7002A_10概述

SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

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CMXDM7002A
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXDM7002A
is special dual version of the 2N7002 Enhancement-
mode N-Channel Field Effect Transistor, manufactured
by the N-Channel DMOS Process, and designed for
high speed pulsed amplifier and driver applications.
This special Dual Transistor device offers low rDS(ON)
and low VDS(ON).
MARKING CODE: X02A
SOT-26 CASE
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ
JA
60
60
40
280
280
1.5
1.5
350
-65 to +150
357
UNITS
V
V
V
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR VGS=20V, VDS=0
100
IDSS
VDS=60V, VGS=0
1.0
IDSS
VDS=60V, VGS=0, TJ=125°C
500
ID(ON)
VGS=10V, VDS=10V
500
BVDSS
VGS=0, ID=10μA
60
VGS(th)
VDS=VGS, ID=250μA
1.0
2.5
VDS(ON)
VGS=10V, ID=500mA
1.0
0.15
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=400mA
1.2
rDS(ON)
VGS=10V, ID=500mA
2.0
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
3.5
rDS(ON)
VGS=5.0V, ID=50mA
3.0
rDS(ON)
VGS=5.0V, ID=50mA, TJ=125°C
5.0
gFS
VDS=10V, ID=200mA
80
Crss
VDS=25V, VGS=0, f=1.0MHz
5.0
Ciss
VDS=25V, VGS=0, f=1.0MHz
50
Coss
VDS=25V, VGS=0, f=1.0MHz
25
ton, toff
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
20
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
mS
pF
pF
pF
ns
R2 (12-February 2010)

 
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