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CMXD2004_10: 产品描述SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES; 文件大小560KB，共3页; 制造商Central Semiconductor

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CMXD2004_10概述

SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES

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CMXD2004

SURFACE MOUNT

TRIPLE ISOLATED

HIGH VOLTAGE

SILICON SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXD2004

type contains three (3) Isolated High Voltage Silicon

Switching Diodes, manufactured by the epitaxial planar

process, epoxy molded in a SUPERmini™ surface

mount package, designed for applications requiring

high voltage capability.

MARKING CODE: X04

SOT-26 CASE

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Average Forward Current

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VRRM

IFRM

IFSM

TJ, Tstg

240

300

200

225

625

4.0

1.0

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

MAX

BVR

trr

VR=240V

VR=240V, TA=150°C

IR=100μA

IF=100mA

VR=0, f=1.0MHz

IF=IR=30mA, Irr=3.0mA, RL=100Ω

300

1.0

5.0

100

UNIT

μA

R4 (9-February 2010)

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