CMUDM8001
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM8001
is an Enhancement-mode P-Channel Field Effect
Transistor, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(on)
and Low Theshold Voltage.
MARKING CODE: C8A
SOT-523 CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
FEATURES:
•
•
•
•
•
•
Power Dissipation 250mW
Low rDS(on)
Low Threshold Voltage
Logic Level Compatible
Small, SOT-523 Surface Mount Package
Complementary Device: CMUDM7001
UNITS
V
V
mA
mA
mW
°C
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
20
10
100
200
250
-65 to +150
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
ton
toff
VGS=10V, VDS=0
VDS=20V, VGS=0
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=4.0V, ID=10mA
VGS=2.5V, ID=10mA
VGS=1.5V, ID=1.0mA
VDS=10V, ID=100mA
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V,
VDS=3.0V,
VGS=0, f=1.0MHz
VGS=0, f=1.0MHz
ID=10mA
ID=10mA
100
15
45
15
35
80
20
0.6
MAX
1.0
1.0
1.1
8.0
12
45
UNITS
μA
μA
V
V
Ω
Ω
Ω
mS
pF
pF
pF
ns
ns
VDD=3.0V, VGS=2.5V,
VDD=3.0V, VGS=2.5V,
R1 (9-February 2010)
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