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CMUD6263E_10

产品描述ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
文件大小488KB,共3页
制造商Central Semiconductor
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CMUD6263E_10概述

ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES

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CMUD6263E
CMUD6263AE
CMUD6263CE
CMUD6263SE
w w w. c e n t r a l s e m i . c o m
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUD6263E
Series types are Enhanced High Voltage Silicon
Schottky diodes, epoxy molded in an ULTRAmini™
SOT-523 surface mount package, designed for low
current fast switching applications requiring a low
forward voltage drop.
ENHANCED SPECIFICATIONS:
IF = 70mA (from 15mA)
IFSM = 100mA (from 50mA)
SOT-523 CASE
The following configurations are available:
CMUD6263E
CMUD6263AE
CMUD6263CE
CMUD6263SE
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING
MARKING
MARKING
MARKING
SYMBOL
VRRM
IF
IFSM
PD
TJ, Tstg
Θ
JA
CODE:
CODE:
CODE:
CODE:
C63
C6A
C6C
C6S
UNITS
V
mA
mA
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
70
70
100
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
TYP
10
MAX
100
320
380
400
750
900
2.0
5.0
UNITS
nA
V
mV
mV
mV
mV
mV
pF
ns
IR
BVR
♦♦
VF
♦♦
VF
VF
♦♦
VF
♦♦
VF
VR=50V
IR=10μA
IF=100µA
IF=500µA
IF=1.0mA
IF=10mA
IF=15mA
VR=0, f=1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
70
290
345
380
700
830
CT
trr
Enhanced specification
♦♦
Additional Enhanced specification
R2 (9-February 2010)

CMUD6263E_10相似产品对比

CMUD6263E_10 CMUD6263CE CMUD6263SE CMUD6263AE CMUD6263E
描述 ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
是否无铅 - 含铅 含铅 含铅 含铅
是否Rohs认证 - 不符合 不符合 不符合 不符合
厂商名称 - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
包装说明 - ULTRAMINI, PLASTIC PACKAGE-3 ULTRAMINI, PLASTIC PACKAGE-3 ULTRAMINI, PLASTIC PACKAGE-3 ULTRAMINI, PLASTIC PACKAGE-3
针数 - 3 3 3 3
Reach Compliance Code - _compli _compli _compli _compli
ECCN代码 - EAR99 EAR99 EAR99 EAR99
配置 - COMMON CATHODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS SINGLE
二极管元件材料 - SILICON SILICON SILICON SILICON
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) - 0.32 V 0.32 V 0.32 V 0.32 V
JESD-30 代码 - R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
JESD-609代码 - e0 e0 e0 e0
最大非重复峰值正向电流 - 0.1 A 0.1 A 0.1 A 0.1 A
元件数量 - 2 2 2 1
端子数量 - 3 3 3 3
最高工作温度 - 150 °C 150 °C 150 °C 150 °C
最低工作温度 - -65 °C -65 °C -65 °C -65 °C
最大输出电流 - 0.07 A 0.07 A 0.07 A 0.07 A
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大功率耗散 - 0.25 W 0.25 W 0.25 W 0.25 W
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 - 70 V 70 V 70 V 70 V
最大反向恢复时间 - 0.005 µs 0.005 µs 0.005 µs 0.005 µs
表面贴装 - YES YES YES YES
技术 - SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 - FLAT FLAT FLAT FLAT
端子位置 - DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

 
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