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SA5230FE

产品描述IC OP-AMP, 3000 uV OFFSET-MAX, 0.25 MHz BAND WIDTH, CDIP8, 0.300 INCH, CERAMIC, DIP-8, Operational Amplifier
产品类别模拟混合信号IC    放大器电路   
文件大小150KB,共17页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
下载文档 详细参数 全文预览

SA5230FE概述

IC OP-AMP, 3000 uV OFFSET-MAX, 0.25 MHz BAND WIDTH, CDIP8, 0.300 INCH, CERAMIC, DIP-8, Operational Amplifier

SA5230FE规格参数

参数名称属性值
厂商名称NXP(恩智浦)
零件包装代码DIP
包装说明DIP,
针数8
Reach Compliance Codeunknown
ECCN代码EAR99
放大器类型OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)0.15 µA
最小共模抑制比85 dB
标称共模抑制比95 dB
最大输入失调电压3000 µV
JESD-30 代码R-GDIP-T8
长度9.955 mm
负供电电压上限-9 V
标称负供电电压 (Vsup)-7.5 V
功能数量1
端子数量8
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料CERAMIC, GLASS-SEALED
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
认证状态Not Qualified
座面最大高度5.08 mm
标称压摆率0.09 V/us
供电电压上限9 V
标称供电电压 (Vsup)7.5 V
表面贴装NO
温度等级INDUSTRIAL
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
标称均一增益带宽250 kHz
最小电压增益60000
宽度7.62 mm

SA5230FE文档预览

INTEGRATED CIRCUITS
NE/SA5230
Low voltage operational amplifier
Product specification
1994 Aug 31
Philips
Semiconductors
Philips Semiconductors
Product specification
Low voltage operational amplifier
NE/SA5230
DESCRIPTION
The NE5230 is a very low voltage operational amplifier that can
perform with a voltage supply as low as 1.8V or as high as 15V. In
addition, split or single supplies can be used, and the output will
swing to ground when applying the latter. There is a bias adjusting
pin which controls the supply current required by the device and
thereby controls its power consumption. If the part is operated at
±0.9V
supply voltages, the current required is only 110µA when the
current control pin is left open. Even with this low power
consumption, the device obtains a typical unity gain bandwidth of
180kHz. When the bias adjusting pin is connected to the negative
supply, the unity gain bandwidth is typically 600kHz while the supply
current is increased to 600µA. In this mode, the part will supply full
power output beyond the audio range.
The NE5230 also has a unique input stage that allows the
common-mode input range to go above the positive and below the
negative supply voltages by 250mV. This provides for the largest
possible input voltages for low voltage applications. The part is also
internally-compensated to reduce external component count.
The NE5230 has a low input bias current of typically
±40nA,
and a
large open-loop gain of 125dB. These two specifications are
beneficial when using the device in transducer applications. The
large open-loop gain gives very accurate signal processing because
of the large “excess” loop gain in a closed-loop system.
The output stage is a class AB type that can swing to within 100mV
of the supply voltages for the largest dynamic range that is needed
in many applications. The NE5230 is ideal for portable audio
equipment and remote transducers because of its low power
consumption, unity gain bandwidth, and 30nV/√Hz noise
specification.
PIN CONFIGURATION
N, D, FE Packages
NC
–IN
+IN
V
EE
1
2
3
4
+
8
7
6
5
NC
V
CC
OUTPUT
BIAS ADJ.
SP00250
Figure 1. Pin Configuration
APPLICATIONS
Portable precision instruments
Remote transducer amplifier
Portable audio equipment
Rail-to-rail comparators
Half-wave rectification without diodes
Remote temperature transducer with 4 to 20mA output
transmission
FEATURES
Works down to 1.8V supply voltages
Adjustable supply current
Low noise
Common-mode includes both rails
V
OUT
within 100mV of both rails
ORDERING INFORMATION
DESCRIPTION
8-Pin Plastic Small Outline (SO) Package
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Plastic Small Outline (SO) Package
8-Pin Ceramic Dual In-Line Package (CERDIP)
8-Pin Plastic Dual In-Line Package (DIP)
TEMPERATURE RANGE
0 to +70°C
0 to +70°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
ORDER CODE
NE5230D
NE5230N
SA5230D
SA5230FE
SA5230N
DWG #
SOT96-1
SOT97-1
SOT96-1
0580A
SOT97-1
1994 Aug 31
2
853-0942 13721
Philips Semiconductors
Product specification
Low voltage operational amplifier
NE/SA5230
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
S
V
IN
V
CM
V
CM
P
D
T
J
T
STG
T
SOLD
Single supply voltage
Dual supply voltage
Input voltage
1
Differential input
voltage
1
PARAMETER
RATING
18
±9
±9
(18)
±V
S
V
CC
+0.5
V
EE
-0.5
500
150
Indefinite
-65 to 150
300
UNIT
V
V
V
V
V
V
mW
°C
s
°C
°C
Common-mode voltage (positive)
Common-mode voltage (negative)
Power dissipation
2
Operating junction temperature
2
80Output short-circuit duration to either power supply pin
2, 3
Storage temperature
Lead soldering temperature (10sec max)
NOTES:
1. Can exceed the supply voltages when V
S
≤ ±7.5V
(15V).
2. The maximum operating junction temperature is 150°C. At elevated temperatures, devices must be derated according to the package ther-
mal resistance and device mounting conditions. Derate above 25°C at the following rates:
FE package at 6.7mW/°C
N package at 9.5mW/°C
D package at 6.25mW/°C
3. Momentary shorts to either supply are permitted in accordance to transient thermal impedance limitations determined by the package and
device mounting conditions.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Single supply voltage
Dual supply voltage
Common-mode voltage (positive)
Common-mode voltage (negative)
Temperature
NE grade
SA grade
RATING
1.8 to 15
±0.9
to
±7.5
V
CC
+0.25
V
EE
-0.25
0 to 70
-40 to 85
UNIT
V
V
V
V
°C
°C
1994 Aug 31
3
Philips Semiconductors
Product specification
Low voltage operational amplifier
NE/SA5230
DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise specified,
±0.9V ≤
V
S
+7.5V or equivalent single supply, R
L
=10kΩ, full input common-mode range, over full operating
temperature range.
SYMBOL
V
OS
V
OS
PARAMETER
Offset voltage
Drift
T
A
=25°C
I
OS
Offset current
T
A
=25°C
TEST CONDITIONS
T
A
=25°C
T
A
=25°C
BIAS
Any
Any
Any
High
Low
High
Low
I
OS
Drift
T
A
=25°C
I
B
Bias current
T
A
=25°C
High
Low
High
Low
High
Low
I
B
Drift
T
A
=25°C
V
S
=±0 9V
=±0.9V
I
S
Supply current
V
S
=±7 5V
=±7.5V
T
A
=25°C
High
Low
Low
High
Low
High
T
A
=25°C
T
A
=25°C
Low
High
Low
High
V
C
CM
Common-mode
Common mode input range
V
OS
≤6mV,
T
A
=25°C
R
S
=10kΩ, V
CM
=±7.5V,
T
A
=25°C
R
S
=10kΩ, V
CM
=±7.5V
T
A
=25°C
PSRR
Power supply rejection ratio
T
A
=25°C
Any
Any
V
S
=±7.5V
Any
Any
High
Low
High
Low
source
sink
source
I
L
Load current
sink
source
sink
source
sink
V
S
=±7.5V
V
S
=±7.5V
V
S
=±7.5V
V
S
=±7.5V
V
S
=±0.9V, T
A
=25°C
V
S
=±0.9V, T
A
=25°C
V
S
=±7.5V, T
A
=25°C
V
S
=±7.5V, T
A
=25°C
R
L
=10kΩ, T
A
=25°C
A
VOL
O
Large-signal open loop
Large signal open-loop gain
V
S
=±7 5V
=±7.5V
R
L
=10kΩ, T
A
=25°C
Any
Any
Any
Any
High
High
High
High
High
Low
High
Low
120
60
100
50
V
-0.25
V
85
80
90
85
75
80
4
5
1
2
4
5
10
15
5
6
6
7
16
32
2000
750
V/mV
V/mV
mA
105
95
dB
95
V
+
320
1.1
2
2
110
600
0.5
0.3
40
20
NE/SA5230
Min
Typ
0.4
3
2
3
3
Max
3
4
5
50
30
100
60
1.4
1.4
150
60
200
150
4
4
160
750
250
800
550
1.6
600
1.7
+0.25
V
+
V
µA
µA
nA/°C
nA
nA/°C
nA
UNIT
mV
µV/°C
CMRR
Common-mode rejection ratio
j
dB
1994 Aug 31
4
Philips Semiconductors
Product specification
Low voltage operational amplifier
NE/SA5230
DC AND AC ELECTRICAL CHARACTERISTICS
(Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
T
A
=25°C +SW
V
S
=±0 9V
=±0.9V
V
O
OUT
Output voltage swing
V
S
=±7.5V
T
A
=25°C -SW
+SW
-SW
T
A
=25°C +SW
T
A
=25°C -SW
+SW
-SW
SR
BW
θ
M
t
S
V
INN
Slew rate
Inverting unity gain bandwidth
Phase margin
Settling time
Input noise
T
A
=25°C
T
A
=25°C
C
L
=100pF, T
A
=25°C
C
L
=100pF, T
A
=25°C
C
L
=100pF, T
A
=25°C
C
L
=100pF, 0.1%
C
L
=100pF, 0.1%
R
S
=0Ω, f=1kHz
R
S
=0Ω, f=1kHz
V
S
=±7.5V
A
V
=1, V
IN
=500mV, f=1kHz
V
S
=±0.9V
A
V
=1, V
IN
=500mV, f=1kHz
BIAS
Any
Any
Any
Any
Any
Any
Any
Any
High
Low
High
Low
Any
High
Low
High
Low
High
High
NE/SA5230
Min
750
750
700
700
7.30
-7.32
7.25
-7.30
7.35
-7.35
7.30
-7.35
0.25
0.09
0.6
0.25
70
2
5
30
60
0.003
%
0.002
V/µs
MHz
Deg.
µs
nV/√Hz
V
Typ
800
800
mV
Max
UNIT
THD
Total Harmonic Distortion
1994 Aug 31
5

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