电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SI9410DYS62Z

产品描述Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
产品类别分立半导体    晶体管   
文件大小235KB,共3页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 选型对比 全文预览

SI9410DYS62Z概述

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI9410DYS62Z规格参数

参数名称属性值
厂商名称Fairchild
零件包装代码SOT
包装说明SMALL OUTLINE, R-PDSO-G8
针数8
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压30 V
最大漏极电流 (ID)7 A
最大漏源导通电阻0.03 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PDSO-G8
元件数量1
端子数量8
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON

SI9410DYS62Z文档预览

Si9410DY
September 1999
Si9410DY*
Single N-Channel Enhancement Mode MOSFET
General Description
This N-Channel Enhancement Mode MOSFET is
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
•
•
•
7.0 A, 30 V. R
DS(ON)
= 0.030
@ V
GS
= 10 V
R
DS(ON)
= 0.050
@ V
GS
= 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
Applications
•
•
•
Battery switch
Load switch
Motor controls







SO-8

U Ã2Ã!$ƒ8ȁyr††Ã‚‡ur…v†rÁ‚‡rq
$EVROXWH 0D[LPXP 5DWLQJV
6\PERO
W
'66
W
*66
D
'
9…hvT‚ˆ…prÃW‚y‡htr
Bh‡rT‚ˆ…prÃW‚y‡htr
9…hvÃ8ˆ……r‡
Ã8‚‡vˆ‚ˆ†Ã
ÃQˆy†rq
Q
'
$
3DUDPHWHU
5DWLQJV
"
8QLWV
W
W
6
±
!
I‚‡rà h
&
"
Q‚r…Ã9v††vƒh‡v‚Ãs‚…ÃTvtyrÃPƒr…h‡v‚
I‚‡rà h
I‚‡rà i
!$
!
X
I‚‡rà p
U
-
ÃU
67*
Pƒr…h‡vtÃhqÃT‡‚…htrÃEˆp‡v‚ÃUr€ƒr…h‡ˆ…rÃShtr
$$ǂÃ $
°
8
7KHUPDO &KDUDFWHULVWLFV
S
θ
-$
S
θ
-&
Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚6€ivr‡
Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚8h†r
I‚‡rà h
$
!$
°
8X
°
8X
I‚‡rà 
3DFNDJH 2XWOLQHV DQG 2UGHULQJ ,QIRUPDWLRQ
'HYLFH 0DUNLQJ
(# 
'HYLFH
5HHO 6L]H
"¶¶
7DSH :LGWK
!€€
4XDQWLW\
!$ȁv‡†
TD(# 9`
9vrÃhqÀhˆshp‡ˆ…vtƂˆ…prƈiwrp‡Ã‡‚ÃpuhtrÐv‡u‚ˆ‡Ãƒ…v‚…Á‚‡vsvph‡v‚

©1999
Fairchild Semiconductor Corporation
Si9410DY Rev. C
Si9410DY
(OHFWULFDO &KDUDFWHULVWLFV
6\PERO
7W
9TT
U Ã2Ã!$ƒ8ȁyr††Ã‚‡ur…v†rÁ‚‡rq
$
3DUDPHWHU
9…hvT‚ˆ…prÃ7…rhxq‚ÃW‚y‡htr
7…rhxq‚ÃW‚y‡htrÃUr€ƒr…h‡ˆ…r
8‚rssvpvr‡
ar…‚ÃBh‡rÃW‚y‡htrÃ9…hvÃ8ˆ……r‡
7HVW &RQGLWLRQV
W
BT
Ã2ÃÃWÃD
9
Ã2Ã!$Ã 6
D
9
Ã2Ã!$à 6Srsr…rprqǂÃ!$ 8
0LQ 7\S
"
0D[
8QLWV
W
2II &KDUDFWHULVWLFV
7W
U
D
9TT
9TT
µ
µ
°
"
€W 8
°
E
W
9T
Ã2Ã!#ÃWÃW
BT
Ã2ÃÃW
W
9T
Ã2Ã!#ÃWÃW
BT
Ã2ÃÃWÃU
E
Ã2Ã$$ 8
!
°
µ
6
6
!$

D
BTTA
Bh‡r7‚q’ÃGrhxhtrÃ8ˆ……r‡
A‚…h…q
W
BT
Ã2Ã!ÃWÃW
9T
Ã2ÃÃW
D
BTTS
Bh‡r7‚q’ÃGrhxhtrÃ8ˆ……r‡
Sr‰r…†r
W
BT
Ã2Ã!ÃÃWÃW
9T
Ã2ÃÃW
 
6
2Q &KDUDFWHULVWLFV
W
BT‡u
I‚‡rÃ!
Bh‡rÃUu…r†u‚yqÃW‚y‡htr
Bh‡rÃUu…r†u‚yqÃW‚y‡htr
Ur€ƒr…h‡ˆ…rÃ8‚rssvpvr‡
T‡h‡vpÃ9…hvT‚ˆ…pr
PSr†v†‡hpr
W
9T
Ã2ÃW
BT
ÃD
9
Ã2Ã!$Ã 6
D
9
Ã2Ã!$à 6Srsr…rprqǂÃ!$ 8
µ
W
W
U
BT‡u
µ
°
##
€W 8
°
E
S
9T‚
W
BT
Ã2Ã ÃWÃD
9
Ã2Ã&Ã6
W
BT
Ã2Ã$ÃWÃD
9
Ã2Ã#Ã6
W
BT
Ã2Ã#$ÃWÃD
9
Ã2Ã"$Ã6
!#
"#
"&
"
'
"
#
$
D
9‚
t
AT
PT‡h‡rÃ9…hvÃ8ˆ……r‡
A‚…h…qÃU…h†p‚qˆp‡hpr
W
BT
Ã2Ã ÃWÃW
9T
Ã2Ã$ÃW
W
9T
Ã2Ã $ÃWÃD
9
Ã2Ã&Ã6
6
T
'\QDPLF &KDUDFWHULVWLFV
8
v††
8
⠠
8
…††
Dƒˆ‡Ã8hƒhpv‡hpr
Pˆ‡ƒˆ‡Ã8hƒhpv‡hpr
Sr‰r…†rÃU…h†sr…Ã8hƒhpv‡hpr
W
9T
Ã2Ã $ÃWÃW
BT
Ã2ÃÃW
sÃ2à ÃHC“
%$
"#$
($
ƒA
ƒA
ƒA
6ZLWFKLQJ &KDUDFWHULVWLFV
‡
q‚
‡
…
‡
q‚ss
‡
s
‡
……
Uˆ…PÃ9ryh’ÃUv€r
Uˆ…PÃSv†rÃUv€r
Uˆ…PssÃ9ryh’ÃUv€r
Uˆ…PssÃAhyyÃUv€r
I‚‡rÃ!
W
99
Ã2Ã!$ÃWÃD
9
Ã2Ã Ã6ÃS
G
Ã2Ã!$Ã
W
BT
Ã2Ã ÃÃWÃS
B@I
Ã2Ã%Ã
'
#
!"
(
"
%
$
#
†
†
†
†
T
9…hvT‚ˆ…prÃSr‰r…†rÃSrp‚‰r…’
Uv€r
D
2Ã!Ã6Ãqvq‡Ã2à 6 †
µ
%
R
t
R
R
tq
U‚‡hyÃBh‡rÃ8uh…tr
Bh‡rT‚ˆ…prÃ8uh…tr
Bh‡r9…hvÃ8uh…tr
W
9T
Ã2Ã $ÃWÃD
9
Ã2Ã!Ã6
W
BT
Ã2Ã ÃW
(
"!
#"
$
8
8
8
'UDLQ6RXUFH 'LRGH &KDUDFWHULVWLFV DQG 0D[LPXP 5DWLQJV
D
T
W
T9
Hh‘v€ˆ€Ã8‚‡vˆ‚ˆ†Ã9…hvT‚ˆ…prÃ9v‚qrÃA‚…h…qÃ8ˆ……r‡
9…hvT‚ˆ…prÃ9v‚qrÃA‚…h…q
W‚y‡htr
W
BT
Ã2ÃÃWÃD
T
Ã2Ã!Ã6ÃÃ
ÃÃÃÃÃÃÃI‚‡rÃ!
&
!

6
W
Notes:
1:
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125° C/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%
Si9410DY Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G

SI9410DYS62Z相似产品对比

SI9410DYS62Z SI9410DYL99Z SI9410DYD84Z SI9410DYL86Z
描述 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
厂商名称 Fairchild Fairchild Fairchild Fairchild
零件包装代码 SOT SOT SOT SOT
包装说明 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
针数 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 30 V 30 V 30 V 30 V
最大漏极电流 (ID) 7 A 7 A 7 A 7 A
最大漏源导通电阻 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
元件数量 1 1 1 1
端子数量 8 8 8 8
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
具功耗意识的FPGA设计技巧
摘要 传统以来,在选用FPGA组件时,成本、容量、效能、封装形式等,通常是系统架构师或设计人员的主要考虑。但随着包括便携消费电子、医疗等要求低功耗的应用快速兴起,现在,功耗效能也已成为 ......
eeleader FPGA/CPLD
AM1808使用USB口连接到PC
请教各位大侠,有没有相关例程及PC端驱动程序? 这样做的速度如何?...
茜茜 DSP 与 ARM 处理器
菜鸟请懂的朋友介绍一下什么是插值算法?
菜鸟请懂的朋友介绍一下什么是插值算法? eeworldpostqq...
雨中 FPGA/CPLD
想试一下能把AD做到什么程度,有人给个目标吗
目标是验证一下自己能把AD的精度做到什么程度,哦,确切地说,分辨率。分别验证在 我公司电源模块 和 线性电源 供电模式下,也给大家一个参考。 首先我还没什么具体的项目能用到这个,所以很想 ......
风过琴弦 单片机
码盘读取步进电机的问题
求助,我使用的是stm32,定时器1输出脉冲给步进电机,利用外部中断读取码盘计数,我想在步进电机堵转的时候让步进电机停止,但是自己写的总是有干扰,大家能给我一个思路吗 步进电机驱动器使用 ......
龙象 stm32/stm8
大学汪毕设求助,关于红外测温
求大神教一教具体怎么弄,前段时间一直忙别的事,现在时间好紧张:Sad:...
MagicCake 51单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 190  1054  889  288  1282  51  8  22  23  11 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved