CMPT5551HC
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5551HC
type is a high current NPN silicon transistor
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for high
voltage and high current amplifier applications.
MARKING CODE: 1FHC
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
mW
°C
°C/W
180
160
6.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=120V
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
VCB=120V, TA=100°C
VEB=4.0V
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V,
VCE=5.0V,
VCE=5.0V,
VCE=10V,
VCE=10V,
VCB=10V,
IC=1.0mA
IC=10mA
IC=50mA
IC=1.0A
IC=10mA, f=100MHz
IE=0, f=1.0MHz
MAX
50
50
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
180
160
6.0
0.15
0.20
1.00
1.00
80
80
30
10
100
15
250
MHz
pF
R1 (1-February 2010)
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