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SGC4463ZSQ: 产品描述Wide Band Low Power Amplifier, 50MHz Min, 4000MHz Max, 1 Func, BIPolar, HALOGEN FREE AND ROHS COMPLIANT, SOT-363, 6 PIN; 产品类别无线/射频/通信射频和微波; 文件大小664KB，共6页; 制造商Qorvo; 官网地址https://www.qorvo.com; 标准

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SGC4463ZSQ概述

Wide Band Low Power Amplifier, 50MHz Min, 4000MHz Max, 1 Func, BIPolar, HALOGEN FREE AND ROHS COMPLIANT, SOT-363, 6 PIN

SGC4463ZSQ规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Qorvo
包装说明	TSSOP6,.08
Reach Compliance Code	compliant
ECCN代码	5A991.G
特性阻抗	50 Ω
构造	COMPONENT
增益	12.9 dB
最大输入功率 (CW)	12 dBm
安装特点	SURFACE MOUNT
功能数量	1
端子数量	6
最大工作频率	4000 MHz
最小工作频率	50 MHz
最高工作温度	85 °C
最低工作温度	-40 °C
封装主体材料	PLASTIC/EPOXY
封装等效代码	TSSOP6,.08
电源	3 V
射频/微波设备类型	WIDE BAND LOW POWER
最大压摆率	58 mA
表面贴装	YES
技术	BIPOLAR

SGC4463ZSQ文档预览

SGC4463Z

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

Package: SOT-363

Product Description

RFMD’s SGC4463Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC4463Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC4463Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

Features



Single Fixed 3V Supply

No Dropping Resistor

Required

Patented Self-Bias Circuitry

1dB

=12.9dBm at 1950MHz

OIP

=27dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

PA Driver Amplifier

Cellular, PCS, GSM, UMTS,

WCDMA

IF Amplifier

Wireless Data, Satellite

Gain & Return Loss

S21

= 3V, I

= 52mA

Applications



Gain, RL (dB)

InGaP HBT

SiGe BiCMOS

Si BiCMOS

-10

-20

-30

0.5

1.5

2.5

3.5

Bias Tee Data, Z

= Z

= 50 Ohms, T

= 25C

S22

S11



SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS



Frequency (GHz)

Parameter

Small Signal Gain

Min.

19.0

12.9

Specification

Typ.

Max.

Unit

Condition

20.5

22.0

850MHz

14.4

15.9

1950MHz

13.3

2400MHz

Output Power at 1dB Compression

13.8

dBm

850MHz

11.9

12.9

dBm

1950MHz

12.5

dBm

2400MHz

Output Third Order Intercept Point

28.0

dBm

850MHz

25.0

27.0

dBm

1950MHz

26.0

dBm

2400MHz

Input Return Loss

10.0

13.0

1950MHz

Output Return Loss

7.0

11.0

1950MHz

Noise Figure

3.7

4.7

1930MHz

Thermal Resistance

180

°C/W

junction - lead

Device Operating Voltage

3.0

Device Operating Current

46.0

52.0

60.0

Test Conditions: V

=3V, I

=52mA Typ., OIP

Tone Spacing=1MHz, P

OUT

per tone=-5dBm, T

=25°C, Z

=50, Bias Tee Data

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS140210

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SGC4463Z

Absolute Maximum Ratings

Parameter

Device Current (I

)

Device Voltage (V

)

RF Input Power* (See Note)

Junction Temp (T

)

Operating Temp Range (T

)

Storage Temp

ESD Rating - Human Body Model

(HBM)

Moisture Sensitivity Level

Rating

110

+150

-40 to +85

+150

Class 1C

MSL 1

Unit

dBm

°C

*Note: Load condition Z

=50

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

<(T

-T

)/R

, j-l and T

LEAD

Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)

Parameter

Unit

dBm

100

MHz

23.6

30.0

16.0

500

MHz

23.0

29.5

14.4

850

MHz

20.5

28.0

13.8

15.0

13.0

25.5

3.1

1950

MHz

14.4

27.0

12.9

13.0

11.0

21.5

3.7

2400

MHz

13.3

26.0

12.9

13.0

10.0

20.5

3.6

3500

MHz

10.4

23.5

10.6

12.0

10.0

19.0

4.4

Small Signal Gain (G)

Output Third Order Intercept Point (OIP

)

Output Power at 1dB Compression (P

1dB

)

Input Return Loss (IRL)

25.0

16.0

Output Return Loss (ORL)

24.5

16.0

25.0

26.0

Reverse Isolation (S

)

Noise Figure (NF)

2.8

Test Conditions: V

=3V I

=52mA Typ. OIP

Tone Spacing=1MHz, P

OUT

per tone=-5dBm

=25°C Z

=50

Typical Performance with Bias Tee, V

=3V, I

=52mA

OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)

P1dB vs. Frequency

OIP3 (dBm)

P1dB (dBm)

0.5

1.5

2.5

3.5

25C

-40C

85C

0.5

1.5

2.5

3.5

25C

-40C

85C

Frequency (GHz)

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS140210

SGC4463Z

Typical Performance with Bias Tee, V

= 3V, I

= 52mA

6.0

5.0

NF vs. Frequency

Current vs. Voltage

+25C

-40C

+85C

NF (dB)

4.0

Id (mA)

3.5

3.0

25C

2.0

1.0

0.5

1.5

2.5

85C

0.5

1.5

2.5

3.5

Frequency (GHz)

Vd (V)

-5

|S11| over Frequency

|S21| over Frequency

Gain (dB)

-10

S11 (dB)

25C

-40C

85C

-15

-20

-25

-30

0.5

1.5

2.5

3.5

25C

-40C

85C

0.5

1.5

2.5

3.5

Frequency (GHz)

-5

-10

-5

|S12| over Frequency

|S22| over Frequency

25C

-40C

85C

S12 (dB)

-10

-15

-20

-25

-30

0.5

S22 (dB)

-15

-20

-25

-30

0.5

1.5

2.5

3.5

25C

-40C

85C

1.5

2.5

3.5

Frequency (GHz)

DS140210

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SGC4463Z

Suggested Pad Layout

Dimensions in inches [millimeters]

OUT

Notes:

1. Provide a large ground pad area under device pins 1,

2, 4, and 5 with several plated-through holes placed as

shown.

2. 1-2 ounce finished copper thickness is recommended.

3. RF I/O lines are 50Ω

Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS140210

SGC4463Z

Application Schematic

Application Circuit Element Values

1uF

1000pF

1,2

RF IN

SGC-4463Z

Reference

Designator

100-2000MHz

2000-4000MHz

1000pF

100pF

120nH

2.7pF

6.8pF

39nH

RF OUT

4,5

Evaluation Board Layout

1uF

1000pF

DS140210

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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SGC4463ZSQ相似产品对比

	SGC4463ZSQ	SGC4463ZSR
描述	Wide Band Low Power Amplifier, 50MHz Min, 4000MHz Max, 1 Func, BIPolar, HALOGEN FREE AND ROHS COMPLIANT, SOT-363, 6 PIN	Wide Band Low Power Amplifier, 50MHz Min, 4000MHz Max, 1 Func, BIPolar, HALOGEN FREE AND ROHS COMPLIANT, SOT-363, 6 PIN
是否Rohs认证	符合	符合
厂商名称	Qorvo	Qorvo
包装说明	TSSOP6,.08	TSSOP6,.08
Reach Compliance Code	compliant	compliant
ECCN代码	5A991.G	5A991.G
特性阻抗	50 Ω	50 Ω
构造	COMPONENT	COMPONENT
增益	12.9 dB	12.9 dB
最大输入功率 (CW)	12 dBm	12 dBm
安装特点	SURFACE MOUNT	SURFACE MOUNT
功能数量	1	1
端子数量	6	6
最大工作频率	4000 MHz	4000 MHz
最小工作频率	50 MHz	50 MHz
最高工作温度	85 °C	85 °C
最低工作温度	-40 °C	-40 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装等效代码	TSSOP6,.08	TSSOP6,.08
电源	3 V	3 V
射频/微波设备类型	WIDE BAND LOW POWER	WIDE BAND LOW POWER
最大压摆率	58 mA	58 mA
表面贴装	YES	YES
技术	BIPOLAR	BIPOLAR

SGC4463ZSQ

SGC4463ZSQ概述

SGC4463ZSQ规格参数

SGC4463ZSQ文档预览

SGC4463ZSQ相似产品对比

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