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Datasheet> 器件分类 > 无线/射频/通信> 射频和微波> SGL-0163
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SGL-0163

产品描述Narrow Band Low Power Amplifier, 100MHz Min, 1300MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN
产品类别无线/射频/通信    射频和微波   
文件大小303KB，共10页
制造商Qorvo
官网地址https://www.qorvo.com
下载文档 详细参数 选型对比 全文预览

SGL-0163概述

Narrow Band Low Power Amplifier, 100MHz Min, 1300MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN

SGL-0163规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Qorvo
包装说明SOT-363, 6 PIN
Reach Compliance Codeunknown
特性阻抗50 Ω
构造COMPONENT
增益14 dB
最大输入功率 (CW)10 dBm
JESD-609代码e0
安装特点SURFACE MOUNT
功能数量1
端子数量6
最大工作频率1300 MHz
最小工作频率100 MHz
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码TSSOP6,.08
电源3/4 V
射频/微波设备类型NARROW BAND LOW POWER
表面贴装YES
技术BIPOLAR
端子面层Tin/Lead (Sn/Pb)
最大电压驻波比1.7

SGL-0163文档预览

SGL-0163(Z)
100MHz to
1300MHz Sili-
con Germa-
nium
Cascadable
Low Noise
Amplifier
SGL-0163(Z)
100MHz to 1300MHz SILICON GERMANIUM
CASCADABLE LOW NOISE AMPLIFIER
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: SOT-363
Product Description
The SGL-0163 is a high performance SiGe HBT MMIC low noise amplifier
featuring one-micron emitters with FT up to 50GHz. This device has an
internal temperature compensation circuit permitting operation directly
from supply voltages as low as 2.5V. The SGL-0163 has been character-
ized at V
D
=3V for low power and 4V for medium power applications. Only
two DC-blocking capacitors, a bias resistor, and an optional RF choke are
required for operation from 800MHz to 1300MHz.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
Temperature
Compensation
Circuit
Features
Internally Matched to 50Ω
800MHz to 1300MHz
High Input/Output Intercept
Low Noise Figure: 1.2dB Typ.
at 900MHz
Low Power Consumption
Single Voltage Supply Opera-
tion
Internal Temperature Com-
pensation
V
S
RF Out / V
S
Applications
Receivers, GPS, RFID
Cellular, Fixed Wiresless,
Land Mobile
RF In
Parameter
Small Signal Gain
Specification (V
S
=3V)
Min.
Typ.
Max.
14.0
15.7
15.5
14.1
4.4
5.2
5.6
17.0
Specification (V
S
=4V)
Min.
Typ.
Max.
16.6
15.8
15.0
9.9
10.1
10.5
Unit
dB
dB
dB
dBm
dBm
dBm
Condition
800MHz
900MHz
1000MHz
800MHz
900MHz
1000MHz
Tone Spacing=1MHz
P
OUT
per tone=-13dBm
800MHz
900MHz
1000MHz
800MHz, Z
S
=50Ω
900MHz, Z
S
=50Ω
1000MHz, Z
S
=50Ω
900MHz
900MHz
900MHz
Output Power at 1dB Compres-
sion
3.2
Input Third Order Intercept
Point
5.0
Noise Figure
5.3
7.0
9.0
1.1
1.2
1.2
1.7
12.1
13.4
14.8
1.6
1.7
1.7
15.7
17.6
20.9
23
dbm
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
°C/W
Input Return Loss
10.0
12.5
Output Return Loss
11.5
15.6
Reverse Isolation
20.9
Device Current
9.5
12.0
14.0
Thermal Resistance
255
Test Conditions: 800MHz to 1300 Application Circuit, T
LEAD
=25°C, Z
0
=Z
L
=50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS091103
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 10
SGL-0163(Z)
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
S
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
LEAD
)
Max Storage Temp
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level
Rating
45
5
+10
+150
-40 to +85
+150
1A
1
Unit
mA
V
dBm
°C
°C
°C
Class
MSL
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Device Voltage (V
D
) vs. Device Current (I
D
) Over Temperature
Load lines for V
S
= +5 Volts, R
B2
= 43
W
and 180
W
5.0
V
S
= +5 V, R
B2
= 43
W
4.5
4.0
3.5
V
D
(Volts)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
11
16
I
D
(mA)
21
26
V
S
= +5 V, R
B2
= 180
W
-40°C
+25°C
+85°C
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS091103
SGL-0163(Z)
Typical RF Performance at V
S
= 3 V and 4 V -- 800-1300 MHz Evaluation Board -- T
LEAD
=+25
°
C
Input IP3 vs Frequency
22.0
20.0
18.0
16.0
Input IP3 (dBm)
P1dB (dBm)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
800
+3V
+4V
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
800
P1dB vs Frequency
+3V
+4V
850
900
950
1000
1050
Freq. (MHz)
1100
1150
1200
1250
1300
850
900
950
1000
1050
Freq. (MHz)
1100
1150
1200
1250
1300
SGL-0163 Noise Figure
2.0
1.9
1.8
1.7
Output IP3 vs Frequency
34.0
32.0
30.0
28.0
Output IP3 (dBm)
26.0
24.0
22.0
20.0
18.0
16.0
14.0
800
+3V
+4V
NF (dB)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
800
+3V
+4V
850
900
950
1000
1050
Freq. (MHz)
1100
1150
1200
1250
1300
850
900
950
1000
1050
Freq. (MHz)
1100
1150
1200
1250
1300
DS091103
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 10
SGL-0163(Z)
Typical RF Performance at V
S
= 3 V -- 800-1300 MHz Evaluation Board -- T
LEAD
=+25
°
C
20
18
16
14
12
10
800
900
1000
1100
1200
1300
|
S
21
|
vs. Frequency
-1 0
-1 2
-1 4
-1 6
-1 8
-2 0
800
900
|
S
11
|
vs. Frequency
S
21
(dB)
S
11
(dB)
1000
1100
1200
1300
F re q u e n c y (M H z)
-1 5
-1 7
-1 9
-2 1
-2 3
-2 5
800
900
1000
1100
1200
1300
F re q u e n c y (M H z)
-1 0
-1 4
-1 8
-2 2
-2 6
-3 0
800
900
1000
1100
1200
1300
|
S
12
|
vs. Frequency
|
S
22
|
vs. Frequency
S
12
(dB)
F re q u e n c y (M H z)
S
22
(dB)
F re q u e n c y (M H z)
Typical RF Performance at V
S
= 4 V -- 800-1300 MHz Evaluation Board -- T
LEAD
=+25
°
C
20
18
16
14
12
10
800
900
1000
1100
1200
1300
|
S
21
|
vs. Frequency
-1 0
-1 2
-1 4
-1 6
-1 8
-2 0
800
900
|
S
11
|
vs. Frequency
S
21
(dB)
S
11
(dB)
1000
1100
1200
1300
F re q u e n c y (M H z)
-1 5
-1 7
-1 9
-2 1
-2 3
-2 5
800
900
1000
1100
1200
1300
F re q u e n c y (M H z)
-1 0
-1 4
-1 8
-2 2
-2 6
-3 0
800
900
1000
1100
1200
1300
|
S
12
|
vs. Frequency
|
S
22
|
vs. Frequency
S
12
(dB)
F re q u e n c y (M H z)
S
22
(dB)
F re q u e n c y (M H z)
4 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS091103
SGL-0163(Z)
RF Performance - 400-500MHz Series L Application Circuit
Gain vs. Frequency @ T
LEAD
=+25C
400-500 MHz Series L Application Circuit
24
23
IRL, VS=3V
Gain vs. Frequency @ T
LEAD
=+25C
400-500 MHz Series L Application Circuit
0
22
21
Gain (dB)
Gain (dB)
-4
IRL, VS=4V
ORL, VS=3V
ORL, VS=4V
20
19
18
17
16
15
14
400
VS=3V, ID=11mA
VS=4V, ID=23mA
-8
-12
-16
410
420
430
440
450
460
470
480
490
500
-20
400
410
420
430
440
450
460
470
480
490
500
Frequency(MHz)
Frequency(MHz)
V
S
=3V, I
D
=11mA (Typ.)
Freq
400 MHz
450 MHz
500 MHz
Gain
(dB)
22.0
21.3
20.6
P1dB
(dBm)
4.4
5.0
5.7
IIP3
(dBm)
1.3
3.2
4.1
OIP3
(dBm)
23.1
24.7
24.7
NF
(dB)
1.1
1.3
1.3
V
S
=4V, I
D
=24mA (Typ.)
Freq
400 MHz
450 MHz
500 MHz
Gain
(dB)
23.1
22.2
21.2
P1dB
(dBm)
10.9
11.4
12.0
IIP3
(dBm)
6.5
8.1
7.8
OIP3
(dBm)
29.6
30.3
28.9
NF
(dB)
2.0
2.1
2.1
RF Performance - 100-800 MHz RC Feedback Application Circuit
Gain vs. Frequency @ T
LEAD
=+25C
100-800 MHz Feedback Application Circuit
30
28
26
24
Gain (dB)
22
20
18
-25
Return Loss (dB)
-10
VS=3V, ID=11mA
VS=4V, ID=23mA
Return Loss vs. Frequency @ T
LEAD
=+25C
100-800 MHz Feedback Application Circuit
0
IRL, VS=3V
-5
IRL, VS=4V
ORL, VS=3V
ORL, VS=4V
-15
-20
16
14
100
-30
150
200
250
300
350
400
450
500
550
600
650
700
750
800
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
Frequency(MHz)
Frequency(MHz)
V
S
=3V, I
D
=11mA (Typ.)
Freq
100 MHz
300 MHz
500 MHz
800 MHz
Gain
(dB)
23.9
21.4
18.7
15.2
Gain
(dB)
26.3
23.0
19.8
16.1
P1dB
IIP3
(dBm)
(dBm)
3.5
-6.8
3.4
-2.5
3.5
0.1
3.7
4.3
V
S
=4V, I
D
=23mA (Typ.)
P1dB
(dBm)
9.2
9.8
9.9
10.0
IIP3
(dBm)
-4.1
2.2
5.2
9.7
OIP3
(dBm)
17.1
18.9
18.8
19.5
OIP3
(dBm)
22.2
25.1
25.0
25.8
NF
(dB)
1.4
1.2
1.2
1.2
NF
(dB)
2.2
1.9
1.7
1.7
Freq
100 MHz
300 MHz
500 MHz
800 MHz
DS091103
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 10
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SGL-0163相似产品对比

SGL-0163 SGL-0163Z
描述 Narrow Band Low Power Amplifier, 100MHz Min, 1300MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN Narrow Band Low Power Amplifier, 100MHz Min, 1300MHz Max, 1 Func, BIPolar, GREEN, SOT-363, 6 PIN
是否Rohs认证 不符合 符合
厂商名称 Qorvo Qorvo
包装说明 SOT-363, 6 PIN TSSOP6,.08
Reach Compliance Code unknown unknown
特性阻抗 50 Ω 50 Ω
构造 COMPONENT COMPONENT
增益 14 dB 14 dB
最大输入功率 (CW) 10 dBm 10 dBm
JESD-609代码 e0 e3
安装特点 SURFACE MOUNT SURFACE MOUNT
功能数量 1 1
端子数量 6 6
最大工作频率 1300 MHz 1300 MHz
最小工作频率 100 MHz 100 MHz
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装等效代码 TSSOP6,.08 TSSOP6,.08
电源 3/4 V 3/4 V
射频/微波设备类型 NARROW BAND LOW POWER NARROW BAND LOW POWER
表面贴装 YES YES
技术 BIPOLAR BIPOLAR
端子面层 Tin/Lead (Sn/Pb) Matte Tin (Sn)
最大电压驻波比 1.7 1.7

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