TSOP18..SI3V
Vishay Semiconductors
Photo Modules for PCM Remote Control Systems
Available Types For Different Carrier Frequencies
Type
TSOP1830SI3V
TSOP1836SI3V
TSOP1838SI3V
TSOP1856SI3V
fo
30 kHz
36 kHz
38 kHz
56 kHz
Type
TSOP1833SI3V
TSOP1837SI3V
TSOP1840SI3V
fo
33.0 kHz
36.7 kHz
40.0 kHz
Description
The TSOP18..SI3V – series are miniaturized
receivers for infrared remote control systems. PIN
diode and preamplifier are assembled on lead frame,
the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
16657
Features
D
Photo detector and preamplifier in one package
D
Internal filter for PCM frequency
D
TTL and CMOS compatibility
D
Output active low
D
Improved shielding against electrical field
disturbance
D
Suitable burst length
6
cycles/burst
Special Features
D
Small size package
D
Supply voltage 3–6 Volt
D
Enhanced immunity against all kinds of
disturbance light
D
No occurrence of disturbance pulses at the output
D
Short settling time after power on (<200
µs)
Block Diagramm
3
Input
Control
Circuit
V
S
80 kW
1
OUT
PIN
AGC
Band
Pass
Demodu-
lator
2
GND
16249
Document Number 82134
Rev. 2, 03–May–02
www.vishay.com
1 (7)
TSOP18..SI3V
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25°C
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
x
85
°C)
t
x
10 s, 1 mm from case
(Pin 3)
(Pin 3)
(Pin 1)
(Pin 1)
Test Conditions
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
–0.3...6.0
5
–0.3...6.0
5
100
–25...+85
–25...+85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Basic Characteristics
T
amb
= 25°C
Parameter
Supply Current (
y
(Pin 3)
)
Supply Voltage (Pin 3)
Transmission Distance
E
v
= 0, test signal see fig.6,
IR diode TSAL6200, I
F
= 300 mA
Pulse width tolerance:
t
pii
– 4/f
o
< t
po
< t
pii
+ 5/f
o
,
test signal see fig.6
Angle of half transmission distance
Test Conditions
V
S
= 3 V, E
v
= 0
V
S
= 3 V, E
v
= 40 klx, sunlight
Symbol Min.
I
SD
I
SH
V
S
d
V
OSL
E
e min
E
e min
E
e max
ϕ
1/2
30
±45
0.3
0.4
3.0
35
250
0.5
0.7
0.5
Typ.
0.75
1.0
6.0
Max
1.0
Unit
mA
mA
V
m
mV
mW/m
2
mW/m
2
W/m
2
deg
Output Voltage Low (Pin 1) I
OSL
= 0.5 mA,E
e
= 0.7 mW/m
2
, f = f
o
Irradiance (30 – 40 kHz)
Irradiance (56 kHz)
Irradiance
Directivity
Application Circuit
330
W
*)
3
TSOP18..SI3V
TSAL62..
1
4.7
mF
*)
>10
kW
recomm.
+3V**)
mC
2
16683
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range: 3 V < V
S
< 6 V
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2 (7)
Document Number 82134
Rev. 2, 03–May–02
TSOP18..SI3V
Vishay Semiconductors
Suitable Data Format
The circuit of the TSOP18..SI3V is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal (not
suppressed) and disturbance signal (supressed) are
carrier frequency, burst length and Signal Gap Time
(see diagram below).
The data signal should fullfill the following condition:
•
Carrier frequency should be close to center
frequency of the bandpass (e.g. 38 kHz).
•
Burst length should be 6 cycles/burst or longer.
•
After each burst a gap time of at least 9 cycles is
neccessary.
•
The data format should not make a continuous
signal transmission. There must be a Signal Gap
Time (longer than 25 ms) at least each 150 ms
(see figure A)
Some examples for suitable data format are:
NEC Code (repetitive pulse), NEC Code
(repetitive data), Toshiba Micom Format, Sharp Code,
RC5 Code, RECS–80 Code, R–2000 Code.
When a disturbance signal is applied to the
TSOP18..SI3V it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP18..SI3V are:
•
DC light (e.g. from tungsten bulb or sunlight),
•
Continuous signal at 38 kHz or at any other
frequency,
•
Signals from fluorescent lamps (see figure B).
•
Continuous IR signal (e.g. 1 ms burst, 2 ms pause)
Signal Gap Time
0
20
40
60
time [ms]
80
100
120
140
Figure A:
Data Signal (Output of IR Receiver) with a Signal Gap Time of 20ms
Signal Gap Time
0
2
4
6
8
10
time [ms]
12
14
16
18
20
Figure B:
Disturbance Signal from Fluorescent Lamp with Signal Gap Time of 7ms
Document Number 82134
Rev. 2, 03–May–02
www.vishay.com
3 (7)
TSOP18..SI3V
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25_C, unless otherwise specified)
1.0
E
e min
/ E
e
– Rel. Responsitivity
100.0
E
e min
– Threshold Irradiance (mW/m
2
)
0.8
f = f
o
10.0
10 kHz
1 kHz
1.0
0.6
0.4
0.2
0.0
0.7
0.8
0.9
1.0
1.1
1.2
1.3
f = f
0
"5%
Df
( 3dB ) = f
0
/7
100 Hz
0.1
0.1
1.0
10.0
100.0
1000.0
DV
sRMS –
AC Voltage on DC Supply Voltage (mV)
94 9102
f/f
0
– Relative Frequency
96 12215
Figure 1. Frequency Dependence of Responsivity
E
e min
– Threshold Irradiance (mW/m
2
)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.10
1.00
10.00
100.00
Ambient,
l
= 950 nm
Correlation with ambient light sources
(Disturbanceeffect):10W/m2^1.4klx
(Stand.illum.A,T=2855K)^8.2klx
(Daylight,T=5900K)
Figure 4. Sensitivity vs. Supply Voltage Disturbances
E
e min
– Threshold Irradiance (mW/m
2
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.5
96 12216
Sensitivity in dark ambient
3.0
3.5
4.0
4.5
5.0
5.5
6.0
96 12214
E – DC Irradiance (W/m
2
)
V
S
– Supply Voltage ( V )
Figure 2. Sensitivity in Bright Ambient
E
e
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f(E)=f
0
1.6
Figure 5. Sensitivity vs. Supply Voltage
Optical Test Signal
600
ms
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
V
OL
T
on
V
O
V
OH
*)
600
ms
T
D*)
T
rep
=100 ms
t
T
rep
–T
D
> 25 ms is recommended for optimal function
Output Signal,
( see Fig.7 )
16177
94 8147
E – Field Strength of Disturbance ( kV/m )
T
off
t
Figure 3. Sensitivity vs. Electric Field Disturbances
Figure 6. Output Function
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4 (7)
Document Number 82134
Rev. 2, 03–May–02
TSOP18..SI3V
Vishay Semiconductors
0.8
T
on
,T – Output Pulse Length (ms)
off
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
16043
T
on
I
s
– Supply Current ( mA )
T
off
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
2.5
Supply current in dark ambient
1.0
10.0
100.0
1000.0 10000.0
96 12222
3.0
E
e
– Irradiance
(mW/m
2
)
3.5 4.0 4.5 5.0 5.5
V
S
– Supply Voltage ( V )
6.0
Figure 7. Output Pulse Diagram
S (
l
)
rel
– Relative Spectral Sensitivity
1.0
0.9
I
s
– Supply Current ( mA )
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15 0
15 30 45 60 75
T
amb
– Ambient Temperature (
°C
)
90
V
s
= 3 V
Figure 10. Supply Current vs. Supply Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
750
94 8408
850
950
1050
1150
16044
l
– Wavelength ( nm )
Figure 8. Supply Current vs. Ambient Temperature
E
e min
– Threshold Irradiance (mW/m
2
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
90
Sensitivity in dark ambient
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
96 12223p2
0.0
–30 –15 0
15 30 45 60 75
96 12221
T
amb
– Ambient Temperature (
°C
)
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
Figure 9. Sensitivity vs. Ambient Temperature
Figure 12. Directivity
Document Number 82134
Rev. 2, 03–May–02
www.vishay.com
5 (7)
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