CMPDM7003
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7003 is
an Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers low rDS(ON)
and ESD protection up to 2kV.
MARKING CODE: C7003
SOT-23 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• ESD protection up to 2kV
• Low rDS(ON)
• Low VDS(ON)
• Low threshold voltage
• Fast switching
• Logic level compatibility
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
A
mW
°C
°C/W
50
50
12
280
1.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR
VGS=5.0V
IGSSF, IGSSR
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
VGS=10V
VGS=12V
VDS=50V, VGS=0
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=0, IS=115mA
VGS=1.8V, ID=50mA
VGS=2.5V, ID=50mA
VGS=5.0V, ID=50mA
VDS=10V, ID=200mA
VDS=25V,
VDS=25V,
VDS=25V,
VGS=0, f=1.0MHz
VGS=0, f=1.0MHz
VGS=0, f=1.0MHz
MAX
100
2.0
2.0
50
UNITS
nA
μA
μA
nA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
50
0.49
1.6
1.3
1.1
200
1.0
1.4
3.0
2.5
2.0
5.0
50
25
R1 (27-January 2010)
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