CMPDM302PH
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM302PH
is a High Current P-Channel Enhancement-mode
Silicon MOSFET, manufactured by the P-Channel
DMOS Process, and is designed for high speed pulsed
amplifier and driver applications. This MOSFET offers
High Current, Low rDS(ON), Low Threshold Voltage,
and Low Leakage Current.
MARKING CODE: 302C
SOT-23F CASE
APPLICATIONS:
•
Load/Power switches
•
Power supply converter circuits
•
Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
•
Low rDS(ON) (0.129Ω MAX @ VGS=2.5V)
•
High current (ID=2.4A)
•
Logic level compatibility
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
30
12
2.4
9.6
350
-55 to +150
357
UNITS
V
V
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I
GSSF, IGSSR
VGS=12V, VDS=0
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VDS=20V, VGS=0
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=4.5V, ID=1.2A
VGS=2.5V, ID=1.2A
VDS=5.0V, ID=2.4A
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDD=10V, VGS=5.0V, ID=2.4A
VDD=10V, VGS=5.0V,
VDD=10V, VGS=5.0V,
ID=2.4A
ID=2.4A
30
0.7
0.061
0.086
13.2
46
398
82
6.4
2.8
1.7
16.3
12.9
MAX
100
1.0
1.4
0.091
0.129
UNITS
nA
μA
V
V
Ω
Ω
S
pF
pF
pF
9.6
4.2
2.6
nC
nC
nC
ns
ns
VDD=10V, ID=2.4A, RG=10Ω
VDD=10V, ID=2.4A, RG=10Ω
R0 (21-October 2010)
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