TO
-22
0A
B
BUK7509-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 2 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
55
75
211
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175 °C; see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
-
-
18
mΩ
-
7.7
9
mΩ
NXP Semiconductors
BUK7509-55A
N-channel TrenchMOS standard level FET
Quick reference data
…continued
Parameter
Conditions
Min
-
Typ
-
Max Unit
400
mJ
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge V
GS
= 0 V; I
D
= 25 A;
V
DS
= 44 V; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
-
25
-
nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7509-55A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
BUK7509-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 2 February 2011
2 of 13
NXP Semiconductors
BUK7509-55A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[2]
[1]
[1]
[2]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Max
55
55
20
75
108
75
433
211
175
175
108
75
433
400
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
120
I
D
(A)
03nj22
120
P
der
(%)
80
03na19
Capped at 75 A due to package
80
40
40
0
0
0
50
100
150
T
mb
(°C)
200
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
© NXP B.V. 2011. All rights reserved.
BUK7509-55A
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 02 — 2 February 2011
3 of 13
NXP Semiconductors
BUK7509-55A
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/I
D
03nj20
t
p
= 10
μs
100
μs
Capped at 75 A due to package
1 ms
10
DC
10 ms
100 ms
1
10
−1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
vertical in still air
Min
-
-
Typ
-
60
Max
0.71
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
δ
= 0.5
0.2
10
−1
0.1
0.05
0.02
10
−2
single shot
03nj21
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10−
1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7509-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 2 February 2011
4 of 13
NXP Semiconductors
BUK7509-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11;
see
Figure 12
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
from contact screw on mounting base to
centre of die ; T
j
= 25 °C
L
S
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
from source lead to source bond pad ;
T
j
= 25 °C
I
S
= 25 A; V
GS
0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
I
D
= 25 A; V
DS
= 44 V; V
GS
= 0 V;
T
j
= 25 °C; see
Figure 13
-
-
-
-
-
-
-
-
-
-
-
-
-
62
12
25
2453
540
299
17
58
78
55
4.5
3.5
7.5
-
-
-
3271
662
427
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
55
50
2
-
1
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.05
2
2
-
7.7
Max
-
-
4
4.4
-
500
10
100
100
18
9
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
55
43
1.2
-
-
V
ns
nC
BUK7509-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 2 February 2011
5 of 13
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
