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CMPD2836E_10: 产品描述ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES; 文件大小538KB，共3页; 制造商Central Semiconductor

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CMPD2836E_10概述

ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES

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CMPD2836E

CMPD2838E

ENHANCED SPECIFICATION

SURFACE MOUNT

DUAL, SILICON

SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD2836E and

CMPD2838E are Enhanced versions of the CMPD2836

and CMPD2838 High Speed Switching Diodes.

These devices are manufactured by the epitaxial

planar process, in an epoxy molded surface mount

SOT-23 package, designed for high speed switching

applications.

FEATURED ENHANCED SPECIFICATIONS:

♦

BVR from 75V min to 120V min.

SOT-23 CASE

♦

VF from 1.2V max to 1.0V max.

The following configurations are available:

CMPD2836E

DUAL, COMMON ANODE

CMPD2838E

DUAL, COMMON CATHODE

MAXIMUM RATINGS:

(TA=25 °C)

♦

Peak Repetitive Reverse Voltage

Average Forward Current

Peak Forward Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

MARKING CODE: CA2E

MARKING CODE: CA6E

UNITS

°C

°C/W

SYMBOL

VRRM

IFM

TJ, Tstg

120

200

300

350

-65 to +150

357

♦

BVR

♦

trr

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

VR=80V

IR=100µA

IF=10mA

IF=50mA

IF=100mA

VR=0, f=1.0MHz

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

100

120

150

0.72

0.84

0.92

1.5

0.85

0.95

1.0

4.0

UNITS

♦

Enhanced specification

R3 (25-January 2010)

CMPD2836E_10相似产品对比

	CMPD2836E_10	CMPD2836E	CMPD2838E
描述	ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES	ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES	ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES
是否无铅	-	含铅	含铅
是否Rohs认证	-	不符合	不符合
包装说明	-	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
针数	-	3	3
Reach Compliance Code	-	_compli	_compli
ECCN代码	-	EAR99	EAR99
配置	-	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	-	SILICON	SILICON
二极管类型	-	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	-	0.85 V	0.85 V
JESD-30 代码	-	R-PDSO-G3	R-PDSO-G3
JESD-609代码	-	e0	e0
元件数量	-	2	2
端子数量	-	3	3
最高工作温度	-	150 °C	150 °C
最低工作温度	-	-65 °C	-65 °C
最大输出电流	-	0.2 A	0.2 A
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED
最大功率耗散	-	0.35 W	0.35 W
认证状态	-	Not Qualified	Not Qualified
最大重复峰值反向电压	-	120 V	120 V
最大反向恢复时间	-	0.004 µs	0.004 µs
表面贴装	-	YES	YES
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	-	GULL WING	GULL WING
端子位置	-	DUAL	DUAL
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED

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