CMOSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMOSH-4E is an
Enhanced version of the CMOSH-3 Silicon Schottky
Diode in an SOD-523 Surface Mount Package.
MARKING CODE: 4E
ENHANCED SPECIFICATIONS:
♦
IF from 100mA max to 200mA max.
SOD-523 CASE
♦
♦
BVR from 30V min to 40Vmin.
VF from 1.0V max to 0.8V max.
MAXIMUM RATINGS:
(TA=25°C)
♦
Peak Repetitive Reverse Voltage
♦
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ
JA
40
200
350
750
250
-65 to +150
500
UNITS
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
IR
♦
BVR
VF
♦
VF
♦
VF
CT
trr
VR=25V
VR=25V, TA=100°C
IR=100µA
IF=2.0mA
IF=15mA
IF=100mA
IF=200mA
VR=1.0V, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
90
25
50
0.29
0.37
0.61
0.65
7.0
MAX
500
100
0.33
0.42
0.80
1.0
5.0
UNITS
nA
μA
V
V
V
V
V
pF
ns
40
♦♦
VF
♦
♦♦
Enhanced specification.
Additional Enhanced specification.
R2 (25-January 2010)
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