CMLT8099M
SURFACE MOUNT
DUAL, MATCHED
NPN SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT8099M
consists of two individual, isolated 8099 NPN silicon
transistors with matched VBE(ON) characteristics.
This PICOmini™ device is manufactured by the
epitaxial planar process and epoxy molded in an
SOT-563 surface mount package.
MARKING CODE: 8CM
SOT-563 CASE
• Device is
Halogen Free
by design
APPLICATIONS:
• Small signal general purpose amplifiers
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Transistor pair matched for VBE(ON)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
80
80
6.0
500
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
µA
µA
V
V
V
V
V
V
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
SYMBOL
TEST CONDITIONS
ICBO
VCB=80V
IEBO
VBE=6.0V
BVCBO
IC=100µA
BVCEO
IC=10mA
BVEBO
IE=10µA
VCE(SAT)
IC=100mA, IB=5.0mA
VCE(SAT)
IC=100mA, IB=10mA
VBE(ON)
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=1.0mA
hFE
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=100mA
fT
VCE=5.0V, IC=10mA, f=100MHz
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
|
VBE1-VBE2
|
VCE=5.0V, IC=1.0µA
|
VBE1-VBE2
|
VCE=5.0V, IC=5.0µA
|
VBE1-VBE2
|
VCE=5.0V, IC=10µA
|
VBE1-VBE2
|
VCE=5.0V, IC=100µA
(TA=25°C unless otherwise noted)
MIN
MAX
0.1
0.1
80
80
6.0
0.4
0.3
0.6
0.8
100
300
100
75
150
6.0
25
MIN
MAX
10
10
10
10
MHz
pF
pF
UNITS
mV
mV
mV
mV
R1 (20-January 2010)
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